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The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]

open access: yesMicromachines (Basel)
Shen Z   +10 more
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Image guided brachytherapy quality assurance on NRG GY017 investigating immunotherapy in addition to chemoradiation for locally advanced cervical cancer. [PDF]

open access: yesBrachytherapy
Kim H   +22 more
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TAC-IGBT: An improved IGBT structure

2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009
An improved Trench Insulated Gate Bipolar Transistors (TIGBT), called the Trench Accumulation Layer Controlled Insulated Gate Bipolar Transistor (TAC-IGBT) is proposed. In this new device, the P base of the Conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated.
null Zehong Li   +2 more
openaire   +1 more source

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