IGBT Overcurrent Capabilities in Resonant Circuits. [PDF]
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TAC-IGBT: An improved IGBT structure
2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009An improved Trench Insulated Gate Bipolar Transistors (TIGBT), called the Trench Accumulation Layer Controlled Insulated Gate Bipolar Transistor (TAC-IGBT) is proposed. In this new device, the P base of the Conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated.
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