Results 111 to 120 of about 10,668 (228)

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source

Genetic Algorithm-Optimized CNN-BiLSTM Framework for Predicting the Remaining Useful Life of IGBT Modules. [PDF]

Sensors (Basel)
Hao Y, Wu J, Zhang Z, Wang Y, Wang T, Liang Y.   +5 more
europepmc   +1 more source

Design of high-speed IGBT device

, 2013
Представлены результаты исследования влияния технологических параметров формирования структуры IGBT-прибора на его динамические характеристики.
Турцевич, А. С., Ловшенко, И. Ю., Стемпицкий, В. Р., Шелибак, И.   +3 more
core  

Multi-Objective Parameter Optimization Design of Heat Pipe Heat Sink for Bidirectional Power Converter Based on MOEDO Algorithm. [PDF]

Micromachines (Basel)
Su Z, Zhou X, Li Y, Wu Q, Zhang H, Wang B, Liu W.   +6 more
europepmc   +1 more source

DESIGN OF HIGH-SPEED IGBT DEVICE

, 2019
Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
V. R. Stempitsky, A. S. Turtsevich, I. Yu. Lovshenko, I. .. Shelibak   +3 more
core  

Influence of Thermal Phenomena on dc Characteristics of the IGBT [PDF]

International Journal of Electronics and Telecommunications, 2018
Paweł Górecki, Krzysztof Górecki
doaj   +1 more source

Unlocking economic gains: the impact of image-guided brachytherapy on cervical cancer treatment in Thailand. [PDF]

Front Public Health
Tharavichitkul E, Chitapanarux I, Sripan P, Tovanabutra C, Phungrassami T, Kittichet R, Lakdee C, Asakit T, Towanamchai K, Songwutwichai S, Thamronganantasakul K, Tungkasamit T, Pinitpatcharalert A, Kulpisitthicharoen S, Wongsrita S, Banlengchit R, Khamchompoo D, Zubizarreta E, Anacak Y.   +18 more
europepmc   +1 more source

El IGBT

, 2019
El transistor IGBT es un dispositivo electrónico trabaja como amplificador de corriente y de voltaje, y tiene componentes semiconductores. El componente más empleado es el silicio y el germanio, en los cuales son agregadas las impurezas.
Ledesma De La Cruz, Wilmer
core  

Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]

Sci Rep
Abdelali K, Bendjedia B, Rizoug N, Kraiem H, Flah A.   +4 more
europepmc   +1 more source

New gate drive unit concepts for IGBTs and reverse conducting IGBTs

, 2017
This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IGBT (RC-IGBT). They have been experimentally tested with medium voltage class IGBT modules (1200...1700V/650…1400A) and a RC-IGBT module (1200V/200A). The switching behaviour of the RC-IGBT was investigated, and a new trigger pulse pattern to drive the RC-
openaire   +1 more source