Results 121 to 130 of about 2,255 (184)

IGBT SPICE model

IEEE Transactions on Industrial Electronics, 1995
During the last few years, great progress in the development of new power semiconductor devices has been made. The new generation of power semiconductors is capable of conducting more current and blocking higher voltage. The IGBT (insulated gate bipolar transistor) is an outgrowth of power MOSFET technology. More like a MOSFET than a bipolar transistor
Franc Mihalic, Karel Jezernik, Klaus Krischan, Manfred Rentmeister   +3 more
openaire   +1 more source

Igbt Parameter Extraction for the Hefner IGBT Model

Proceedings of the 41st International Universities Power Engineering Conference, 2006
The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation.
Ruchira Withanage, Noel Shammas, Sarath Tennakoon, Colin Oates, Will Crookes   +4 more
openaire   +1 more source

600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 2002
We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up ...
M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, I. Takata   +5 more
openaire   +1 more source

The 3rd generation IGBT toward a limitation of IGBT performance

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002
The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of IGBT performance predicted by numerical simulation. The
M. Otsuki, S. Momota, A. Nishiura, K. Sakurai   +3 more
openaire   +1 more source

IGBT modeling for analysis of complicated multi-IGBT Circuits

2009 2nd International Conference on Power Electronics and Intelligent Transportation System (PEITS), 2009
A new IGBT (Insulated Gate Bipolar Transistor) model for simulation of complicated multi-IGBT circuits is presented. Based on the gate charge and discharge behaviors of IGBT, it piecewise models the turn-on and -off transient of IGBT, and simulates the static characteristics with curve fitting method.
null Deng Yi, null Zhao Zhengming, null Yuan Liqiang   +2 more
openaire   +1 more source

Study on Electrothermal Characteristics of the Reverse-Conducting IGBT (RC-IGBT)

2020 21st International Conference on Electronic Packaging Technology (ICEPT), 2020
The reverse-conducting IGBT RC-IGBT is a new structure device, which integrates an IGBT chip and a fast recovery diode (FRD) chip on a single chip. Compared with traditional IGBT, the RC-IGBT has many advantages such as high power density, small size, high reliability and low cost. However, its complex structure and process, as well as snap-back effect
Yuan Chen, Peng Zhang, Xiaofeng Hu, Hong-Zhong Huang, Ping Lai, Zhiyuan He, Yiqiang Chen, Zhi wei Fu, Chang Liu   +8 more
openaire   +1 more source

Surge current capability of IGBTs

International Multi-Conference on Systems, Sygnals & Devices, 2012
Commonly an IGBT cannot withstand a surge-current pulse (large overcurrent with a duration of some milliseconds) due to the current saturation characteristic of this device. In the case of a converter's single device failure the IGBT switches are driven into pulse-blocking mode to prevent a DC-link short-circuit and subsequent IGBT failures.
Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner   +3 more
openaire   +1 more source

Design of Current Sensors in IGBT's

50th Annual Device Research Conference, 1992
Summary form only given. The operation of current sensors (or pilots) in IGBTs (insulated-gate bipolar transistors) is described experimentally and with two-dimensional simulations. Two different sensor structures are compared. In the most conventional structure, a small IGBT, separated from the main device by metallization only, is used as a current ...
T.P. Chow, D.N. Pattanayak, E.J. Wildi, J.M. Pimbley, B.J. Baliga, M.S. Adler   +5 more
openaire   +1 more source

Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018
In this paper we show simulation and experimental results of new 3.3kV RET-IGBT (Recessed Emitter Trench IGBT). Simulation results show that although the RET concept reduces the active region's trench to trench mesa, it does not show the reported inversion layer modulation phenomenon in conventional "narrow mesa" devices, which can degrade performance ...
L. Ngwendson, I. Deviny, C. Zhu, I. Saddiqui, C. Kong, A. Islam, J. Hutchings, J. Thompson, M. Briggs, O. Basset, H. Luo, Y. Wang, Y. Yao   +12 more
openaire   +1 more source

2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)

IEEE Transactions on Electron Devices, 1996
A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not ...
Y. Takahashi, T. Koga, H. Kirihata, Y. Seki   +3 more
openaire   +1 more source