Results 101 to 110 of about 10,668 (228)
, 2000 In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed.
Sheng, Kuang +5 more
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Design and Modeling of a Novel IGBT [PDF]
, 2009 绝缘栅双极晶体管IGBT(InsulatedGateBipolarTransistor)由于结合了MOSFET和BJT各自的优点，表现出开关速度高、饱和压降低和可耐高压、大电流等优良特性，是一种用途十分广泛的半导体功率器件，许多领域已经逐步取代了电力晶体管(GTR)和电力场效应晶体管(MOSFET)。目前，国内对IGBT产品的需求量日趋增多，但国内暂时还没有独立的生产厂家，所需的IGBT产品主要依赖进口，因此，开发和研制具有自主知识产权的性能优良的IGBT器件已成为迫切需要，本文鉴于此背景 ...
杨玲玲
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IGBT based high power DC-DC converters
, 2012 In this paper, a type of high power DC-DC converter based on IGBT switches is proposed. Basically, the converter consists of two bidirectional IGBT bridges linked by a pair of energy storage capacitors.
Zhang, Xiao-Ping; id_orcid +3 more
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IGBT DRIVER AND PROBLEMS OF ITS APPLICATION
, 2017 The paper deals with the problems of creation and application of IGBT driver and their possible solutions. Creating your own IGBT driver and apply it to correctly drive transistors according to the desired purposes might be challenging. In this paper, we
Martinovs, Andris +2 more
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Investigation in characteristics of 1200V Vertical IGBT for different trench designs
, 2013 [[abstract]]In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field stop (FS) IGBT at various temperatures for different trench widths and depths.
Anil Kumar, P;Anil Kumar, P;Suresh, Vinay;Vinay Suresh, ;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
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AIP AdvancesThe improvement in the reliability and lifespan of insulated gate bipolar transistor (IGBT) devices and the enhancement of system efficiency under high-frequency pulse conditions are receiving increasingly wide attention, and all of these are closely ...
Zenghui Yang +4 more
doaj +1 more source
Purpose: To retrospectively review locally advanced cervical cancer (CC) cases treated with three-dimensional image-guided brachytherapy (3D-IGBT) and two-dimensional (2D)-IGBT.Materials and methods: Patients with Stage IB-IVa CC who underwent ...
木下, 敏史 +2 more
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Type Selection and Design of Drive and Protection of Power Device of Mine-used Frequency Converter
Gong-kuang zidonghua, 2011 The paper analyzed requiements of underground devices for power device IGBT of frequency converter and electrical parameters which should be considered in type selection of IGBT, and designed a drive and protection circuit of IGBT by use of 2SD315 module.
RONG Liang +5 more
doaj
Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices.
Neudeck, G.W., Gilbert, P.V.
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Conversor DC-DC quase-ressonante para altas potencias utilizando IGBT [PDF]
, 1991 Fernandes, Dilnei Jose Martins
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