Results 81 to 90 of about 10,668 (228)
Structural Features and Recent Progress of Super Junction IGBT
, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
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, 2017 Power semiconductor devices play an important role in industrial applications. In power electronics, semiconductor devices are used as a controlled switch.
Thein, Myo
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ПРОЕКТИРОВАНИЕ IGBT-ПРИБОРА ВЫСОКОГО БЫСТРОДЕЙСТВИЯ
, 2019 Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
И. Ю. Ловшенко +7 more
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A Review of Thermal Design for IGBT Module
, 2020 In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Fang QI +5 more
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Junction Temperature Estimation for IGBT Modules Through Knee Voltage
, 2022 Thermo-sensitive electrical parameters (TSEPs) are widely employed in the junction temperature estimation of insulated gate bipolar transistor (IGBT) modules.
Wei, Xing +3 more
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, 2014 A new class of high-voltage semiconductor devices, known as a reverse conducting IGBT (RC-IGBT), has emerged in recent years from research efforts to diminish the usage of external anti-parallel free-wheeling diode chips for IGBT switching applications ...
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Моделирование технологии формирования структуры IGBT транзистора [PDF]
, 2010 IGBT-транзистор (англ. Insulated Gate Bipolar Transistor — биполярный транзистор с изолированным затвором) представляет собой силовой электронный прибор, предназначенный в основном, для управления электрическими приводами. Выпускаются как отдельные IGBT,
Шелибак, И. М.
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Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [PDF]
, 2009 Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal.
Bakhtiar, Ahmad
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, 2003 Tässä työssä on tutkittu IGBT-modulin kyllästysvalvontaa. Periaatteellisena erona yleisesti käytössä olevaan IGBT:n kyllästysvalvontamenetelmään on valvonnan perustuminen IGBT-modulin läpi kulkevaan virtaan, sen yli olevan jännitteen mittaamisen asemesta.
Pouttu, Jussi
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Application Research on SiC Hybrid IGBT Devices
, 2015 SiC power devices have the advantages of high frequency, energy saving, high power, high temperature resistance and radiation hardening. The current application of SiC was introduced, the characteristic of SiC-JBS, SiC-MOSFET and SiC hybrid IGBT were ...
XIN Li +5 more
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