Results 81 to 90 of about 12,603 (120)

Optimization of Power Loss Reduction in IGBTbased Three-Phase Rectifiers using Discontinuous Pulse Width Modulation Method: A SimulationBased Analysis with QSpice and Fuji IGBT Simulator

open access: yesJurnal Rekayasa Elektrika
The increasing demand for electricity supply is evident across various modern industrial sectors. Electrification advancements in the transportation industry aim to address environmental and energy issues and continue to evolve.
Rio Pratama   +3 more
doaj   +1 more source

Anode Shorts Layout Dependence of Bi-mode IGBT (BiGT) On-state Characteristics Reverse Conducting IGBT (RC-IGBT)

open access: yes, 2014
A new class of high-voltage semiconductor devices, known as a reverse conducting IGBT (RC-IGBT), has emerged in recent years from research efforts to diminish the usage of external anti-parallel free-wheeling diode chips for IGBT switching applications ...

core  

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

open access: yes, 2015
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Kutev Valery, Krainyukov Alexander
core   +1 more source

Design and Modeling of a Novel IGBT [PDF]

open access: yes, 2009
绝缘栅双极晶体管IGBT(InsulatedGateBipolarTransistor)由于结合了MOSFET和BJT各自的优点,表现出开关速度高、饱和压降低和可耐高压、大电流等优良特性,是一种用途十分广泛的半导体功率器件,许多领域已经逐步取代了电力晶体管(GTR)和电力场效应晶体管(MOSFET)。目前,国内对IGBT产品的需求量日趋增多,但国内暂时还没有独立的生产厂家,所需的IGBT产品主要依赖进口,因此,开发和研制具有自主知识产权的性能优良的IGBT器件已成为迫切需要,本文鉴于此背景 ...
杨玲玲
core  

Evaluation of the power loss in IGBT single transistor device under the condition of pulse duration of 100 ns

open access: yesAIP Advances
The improvement in the reliability and lifespan of insulated gate bipolar transistor (IGBT) devices and the enhancement of system efficiency under high-frequency pulse conditions are receiving increasingly wide attention, and all of these are closely ...
Zenghui Yang   +4 more
doaj   +1 more source

Thermal stability of IGBT high-frequency operation

open access: yes, 2000
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature.
Sheng, Kuang   +2 more
core   +1 more source

IGBT Gate Boost Drive Technology for Promoting the Overload Capacity of Traction Converter

open access: yesMicromachines
Under certain circumstances, a high-speed railway may require constant acceleration or emergency braking, in which case the inverter may experience short-term overload conditions and the current passing through the IGBT will go beyond the rated design ...
Yunxin Zhang   +7 more
doaj   +1 more source

Condition monitoring of IGBT

open access: yes, 2017
Power semiconductor devices play an important role in industrial applications. In power electronics, semiconductor devices are used as a controlled switch.
Thein, Myo
core  

IGBT Dynamic Loss Reduction through Device Level Soft Switching

open access: yes, 2018
Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications.
Lan Ma   +6 more
core   +1 more source

A Single Phase Active Front-End Converter for Unity Power Factor

open access: yesJurnal Rekayasa Elektrika
A rectifier is an electronic circuit that converts Alternating Current (AC) into Direct Current (DC). This circuit is very important in many electronic applications, especially in power supplies, battery chargers, and other equipment requiring a DC power
Farid Dwi Murdianto   +2 more
doaj   +1 more source

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