Results 131 to 140 of about 2,255 (184)

Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012
A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat ...
Masakiyo Sumitomo, Junichi Asai, Hiroki Sakane, Kazuki Arakawa, Yasushi Higuchi, Masaki Matsui   +5 more
openaire   +1 more source

The Bi-IGBT: a low losses power structure by IGBT parallel association

Semiconductor Science and Technology, 2008
A low losses IGBT structure, the Bi-IGBT, made up by the parallel association of a slow and a fast IGBT is presented in this work. The structure has been simulated using Saber® tools including the IGBT physical models and compared with experimental results.
C Caramel, R De Maglie, P Austin, J L Sanchez, J Le Gal, E Imbernon, J P Laur, D Flores, S Hidalgo, J Millan, J Rebollo   +10 more
openaire   +1 more source

Modeling for IGBT

2006 IEEE International Conference on Industrial Technology, 2006
A mathematical model has been developed for an insulated gate bipolar transistor (IGBT) by compartmenting it into two diodes which are connected in series with reverse configuration. One diode is an ordinary diode while other is a controlled diode.
openaire   +1 more source

Electrothermal characterization of IGBT

Proceedings of 1994 IEEE Industry Applications Society Annual Meeting, 2002
The improvement of the switch function, due to technological evolution, is still limited by the intrinsic characteristics of silicon. It is therefore crucial, for the design of power convertors, to develop an understanding of electrical and thermal behaviours of power components, in order to estimate their actual performances and to be able to choose a
S. Rael, C. Schaeffer, R. Perret
openaire   +1 more source

A review of IGBT models

IEEE Transactions on Power Electronics, 2000
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed.
null Kuang Sheng, B.W. Williams, S.J. Finney   +2 more
openaire   +1 more source

Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT

IEEE Electron Device Letters, 2012
In this letter, we report Eoff-versus- Vce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dEoff/dVce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors.
Friedhelm Bauer, Iulian Nistor, Andrei Mihaila, Marina Antoniou, Florin Udrea   +4 more
openaire   +1 more source

Thermal Performances and Annual Damages Comparison of MMC Using Reverse Conducting IGBT and Conventional IGBT Module

IEEE Transactions on Power Electronics, 2021
Laili Wang, Jinjun Liu, Fengtao Yang
exaly  

Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications

Micromachines, 2022
Sinan Kivrak, Tolga Ozer, Ibrahim A S Abdalgader   +2 more
exaly  

Silicon Carbide IGBT

2011
In the previous chapter, it has been demonstrated that the silicon carbide planar-shielded inversion-mode power MOSFET structure has excellent on-state resistance for devices with breakdown voltage of up to 10,000 V. However, the specific on-resistance for these devices becomes relatively large when their blocking voltage is scaled to 20,000 V ...
openaire   +1 more source

Warping model of high-power IGBT modules subjected to reflow soldering process

International Journal of Mechanical Sciences, 2023
Shang Gao, Renke Kang
exaly