Results 91 to 100 of about 11,789 (277)
High Voltage, EarlyView.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing ...
Gilbert, P.V., Neudeck, G.W.
openaire +2 more sources
Creation of the Insulated Gate Bipolar Transistor [PDF]
, 2023 B. Jayant Baliga
openalex +1 more source
An introduction to the BANNING design automation system for shuttle microelectronic hardware development [PDF]
The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment.
Mcgrady, W. J.
core +1 more source
Weibull‐Neural Network Framework for Wind Turbine Lifetime Monitoring and Disturbance Identification
Wind Energy, Volume 29, Issue 4, April 2026.ABSTRACT Wind turbines are vital for sustainable energy, yet their reliability under diverse operational and environmental conditions remains a challenge, often leading to costly failures. This study presents a novel Weibull‐Neural Network Framework to enhance wind turbine lifetime monitoring by estimating reliability (R(t)) and mean residual life (MRL)
Fatemeh Kiadaliry +2 more
wiley +1 more source
Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter [PDF]
, 2002 We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter.
Asenov, A., Brown, A.R., Watling, J.R.
core +1 more source
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
doaj
Utilization of bottom ash for alkali-activated (SI-AL) materials: a review [PDF]
, 2015 In Malaysia, 180 tons/day of solid waste bottom ash are produced by a Tanjung Bin power station, which is one of the four coal power plants in Malaysia.
Abdul Kadir, Aeslina +5 more
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