Multilevel metallization method for fabricating a metal oxide semiconductor device [PDF]
An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and
Bouldin, D. L. +3 more
core +1 more source
Study of switching transients in high frequency converters [PDF]
As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many
Elbuluk, Malik E. +2 more
core +1 more source
New Energy Empowerment Using Kernel Principal Component Analysis in Insulated Gate Bipolar Transistors Module Monitoring [PDF]
Boying Liu +4 more
openalex +1 more source
Because of developments in high-power converters, it has become crucial to investigate how effective inverter performance is. consequently, via being aware of the temperature value of the junction for the inverter switch.
Ahmed Shihab Ahmed, Riyadh Ghanim Omar
doaj +1 more source
A direct bonding copper degradation monitoring method for insulated gate bipolar transistor modules: Boundary‐dependent thermal network combined with feedback control [PDF]
Xiaotong Zhang +4 more
openalex +1 more source
Health monitoring: the key technology for sustainable utilization of insulated gate bipolar transistors [PDF]
He Liu, Xinyu Li, Zhifeng Liu
openalex +1 more source
Diseño de un convertidor elevador continua-continua para aplicaciones fotovoltaicas [PDF]
Este trabajo presenta el diseño de un convertidor elevador de corriente continua a corriente continua cuyo objetivo es alimentar la etapa de potencia de un inversor fotovoltaico de dos etapas.
Cadena, Carlos Alberto +2 more
core +1 more source
Adjoint method for the optimization of insulated gate bipolar transistors [PDF]
Chen Zhu, Petru Andrei
openalex +1 more source
Optimal Double Sided Gate Control of IGBT for Lower Turn-off Loss and Surge Voltage Suppression [PDF]
The current density of power semiconductor devices continues to increase and, carrier injection has been enhanced by several methods even though turn-off loss tends to be increased.
Harada Shohei +2 more
core +1 more source

