Results 171 to 180 of about 11,789 (277)

Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]

Micromachines (Basel)
Dhyani M, Singh S, Tzhayek N, Bernstein JB.   +3 more
europepmc   +1 more source

Comparison of insulated gate bipolar transistor models for FPGA-based real-time simulation of electric drives and application guideline

, 2011
Aung Myaing, M. O. Faruque, Venkata Dinavahi, C. Dufour   +3 more
openalex   +1 more source

Biomimetic Synapses Based on Halide Perovskites for Neuromorphic Vision Computing: Materials, Devices, and Applications. [PDF]

Nanomicro Lett
Sun Z, Zhao X, Si H, Liao Q, Zhang Y.
europepmc   +1 more source

A Transferable Prediction Method for the Remaining Useful Life of Insulated Gate Bipolar Transistors Under Alternating and Direct Current Drive Conditions

Gaige Chen, Yongyi Li, Yahong Yang, Xiaoshen Zhang, Wei Deng, Jinsong Liu   +5 more
openalex   +1 more source

Characteristic Analysis and Error Compensation Method of Space Vector Pulse Width Modulation-Based Driver for Permanent Magnet Synchronous Motors. [PDF]

Sensors (Basel)
Chen Q, Wu W, He Q.
europepmc   +1 more source

Bioinspired thermally conducting packaging for heat management of high performance electronic chips. [PDF]

Commun Eng
Wang H, Bai P, Cui H, Zhang X, Tang Y, Liang S, Li S, Zhou G.   +7 more
europepmc   +1 more source

A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability. [PDF]

Sci Rep
Guo J, Qian Z, Chen X, Xu H, Yang Y, Zhang DW.   +5 more
europepmc   +1 more source

Research on Underwater Constant High-Voltage DC Switching Technology for MCSEM. [PDF]

Sensors (Basel)
Ren Z, Wang M, Luo X, Wang C, Chen T.
europepmc   +1 more source

Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor For Discharge-Pumped Lasers

, 2014
Nur Syarafina Binti Othman, Tsubasa Jindo, M. Yamada, Miho Tsuyama, Hitoshi Nakano   +4 more
openalex   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source