Results 231 to 240 of about 11,789 (277)
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A thermal model for insulated gate bipolar transistor module
IEEE Transactions on Power Electronics, 2004A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/.
null Zhaohui Luo +2 more
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The Trench Planar Insulated Gate Bipolar Transistor (TPIGBT)
IEE Colloquium Recent Advances in Power Devices, 1999A new type of IGBT structure, with a trench gate placed in the middle of the JFET region, has been proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance and resistive turn-off, and compared to a reference 2 kV planar, fine-lithography IGBT.
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A novel trench clustered insulated gate bipolar transistor (TCIGBT)
IEEE Electron Device Letters, 2000A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate
O. Spulber +7 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
IEEE Transactions on Plasma Science, 2013This paper describes a low cost, easy-to-implement circuit for triggering ignitrons in plasma physics experiments and other pulsed power applications. Using insulated gate bipolar transistors (IGBTs) for rapid switching, the circuit delivers >2 peak current from a 0.1-μF capacitor to the ignitron trigger pin with a rise time of ~ 0.6 μs.
Chaplin, Vernon H., Bellan, Paul M.
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Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
Japanese Journal of Applied Physics, 2010In current insulated gate bipolar transistor (IGBT) technology, a corner or centered gate pad is employed with polycrystalline silicon (poly-Si) to form the metal oxide semiconductor (MOS) gate structure which forms a resistor–capacitor (RC) network across the die. This paper presents, for the first time, an analysis using circuit simulator, SABER,
Hongyao Long +3 more
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Insulated Gate Bipolar Transistors based on Pure Boron Collectors
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Continuous efforts are invested to improve mid- and high-voltage devices to improve on-state resistances, switching performance and overall power losses. However, given the current maturity of Silicon technologies, significant improvements are difficult to achieve.
Ahmed Elsayed +2 more
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Equivalent circuit model for an insulated gate bipolar transistor
IEE Proceedings - Electric Power Applications, 2005An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations.
C.-H. Kao, C.-C. Tseng, Y.-C. Liang
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An insulated gate bipolar transistor with high surge endurance
Electronics and Communications in Japan (Part II: Electronics), 1996AbstractThe relationship between the device property under drain‐source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1) the impurity concentration in the n−drain layer and the layer thickness determine the breakdown mode.
Norihito Tokura +2 more
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Thermomechanical Reliability Investigation of Insulated Gate Bipolar Transistor Module
2018 41st International Spring Seminar on Electronics Technology (ISSE), 2018Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and delamination of the solder joints are still considered as one main failure cause in Insulated Gate Bipolar Transistor (IGBT) power modules. Frequently used test procedures such as accelerated power cycling and thermal cycling allow to rate reliability and to
Magnus Liedtke +3 more
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