Results 241 to 250 of about 11,789 (277)

The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

IEEE Transactions on Electron Devices, 2010
In this paper, we present a detailed analysis and optimization of the superjunction (SJ) insulated gate bipolar transistor (IGBT). The SJ IGBT is a new device that breaks the IGBT limits, i.e., it delivers performance that is dramatically better. More specifically, we demonstrate here that the optimized SJ IGBT can deliver turn-off losses that are at ...
Marina Antoniou, Florin Udrea, Friedhelm Bauer   +2 more
openaire   +1 more source

Turnoff transient characteristics of complementary insulated-gate bipolar transistor

IEEE Transactions on Electron Devices, 1994
An analytical model used for analyzing the fast turnoff transient characteristics of the complementary insulated-gate bipolar transistor (CIGBT) is proposed, accounting for the transient charge-sharing effect and the back-injection effect. The normalized turnoff transient current of the CIGBT is obtained, which is in agreement with the enhanced SPICE3 ...
null Zhaoji Li, null Juan Du
openaire   +1 more source

Computer Aided Optimization of Insulated Gate Bipolar Transistors

ECS Meeting Abstracts
Compared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies.
Pranathi Brungi, Petru Andrei
openaire   +1 more source

D.C. Drive System With the Insulated Gate Bipolar Transistors

2006 IEEE International Conference on Automation, Quality and Testing, Robotics, 2006
A reversible D.C. drive system, which employs a four-quadrant chopper with the insulated gate bipolar transistors (IGBT), is presented. The chopper circuit employs a "half-bridge" configuration. The operation of the converter was tested at a command frequency of [1÷10] kHz.
openaire   +1 more source

Mahalanobis Distance Approach for Insulated Gate Bipolar Transistors Diagnostics

2010
Insulated gate bipolar transistors (IGBT) are used in critical application areas such as inverters in hybrid cars, motion control systems for variable speed motor drives and high power switch mode power supplies. In these critical applications, diagnostic approaches are required to monitor the health and predict the reliability of these devices to ...
Nishad Patil, Diganta Das, Michael Pecht
openaire   +1 more source

Insulated Gate Bipolar Transistors

2023
openaire   +1 more source

Insulated Gate Bipolar Transistor Failure Analysis in Overvoltage Condition

RE&PQJ
This paper presents the Insulated Gate Bipolar Transistor (IGBT) device failure analysis in overvoltage condition, which is a normal phenomenon occurring in a poor power quality utility system. In most of the IGBT gate drive design, conventionally it embeds the overvoltage protection circuit, however, the problem of short-circuit would still happen ...
null B.C. KOK, null M.S. Looi, null H.H. Goh   +2 more
openaire   +1 more source

High Power Insulated Gate Bipolar Transistors (IGBTs)

Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988
H. Ohashi, A. Nakagawa, M. Hideshima
openaire   +1 more source

An organic electrochemical transistor for multi-modal sensing, memory and processing

Nature Electronics, 2023
, , Tao Li
exaly  

Series connection of insulated gate bipolar transistors (IGBTs)

2005 European Conference on Power Electronics and Applications, 2005
R. Withanage, N. Shammas, S. Tennakoon
openaire   +1 more source