Results 41 to 50 of about 11,789 (277)
Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices [PDF]
The switching behavior of semiconductor devices responds to charge/discharge phenomenon of terminal capacitance in the device. The differential capacitance in a semiconductor device varies with the applied voltage in accordance with the depleted region ...
Funaki, Tsuyoshi +3 more
core +1 more source
The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
doaj +1 more source
Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors [PDF]
In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Amaratunga, G. +7 more
core +1 more source
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source
Investigation of FACTS devices to improve power quality in distribution networks [PDF]
Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
core +1 more source
Stochastic RUL calculation enhanced with TDNN-based IGBT failure modeling [PDF]
Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets.
Alghassi, Alireza +2 more
core +1 more source
Evaluation of the turn‐off transient controllability for high‐power IGBT modules
The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan +7 more
doaj +1 more source
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu +4 more
doaj +1 more source
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source
The paper analyzes quasi-stationary processes in traction electric drives of subway cars using mathematical models of synchronous jet motors with permanent magnets.
Олександр Миколайович Штомпель
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