Results 51 to 60 of about 11,789 (277)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]

, 2012
Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen, Nogarède, Bertrand, Vidal, Paul-Etienne   +2 more
core   +4 more sources

Smart Catheters for Diagnosis, Monitoring, and Therapy

Advanced Healthcare Materials, EarlyView.
This study presents a comprehensive review of smart catheters, an emerging class of medical devices that integrate embedded sensors, robotics, and communication systems, offering increased functionality and complexity to enable real‐time health monitoring, diagnostics, and treatment. Abstract This review explores smart catheters as an emerging class of
Azra Yaprak Tarman, Samiha Ahmed, Majed Othman Althumayri, Megan Guy, Darlenne Chavez Lugo, Frances S. Ligler, George T. Ligler, Rahmi Oklu, Hiroshi Kawahira, Michael J. McShane, Jun Kameoka, Jonathan Bova, Hatice Ceylan Koydemir   +12 more
wiley   +1 more source

A four‐step control for IGBT switching improvement using an active voltage gate driver

IET Power Electronics, 2022
Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li, Kun Tan, Bing Ji, Zhiqiang Wang, Shuai Ding, Paul Lefley   +5 more
doaj   +1 more source

Transient electrothermal simulation of power semiconductor devices [PDF]

, 2010
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
,, Bryant, AT, Du, B, Hudgins, JL, Mantooth, HA, Palmer, PR, Santi, E   +6 more
core   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

A Simplified Spice Model for IGBT

Active and Passive Electronic Components, 1998
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi, A. Maouad, O. Elmazria, A. Hoffmann, J. P. Charles   +4 more
doaj   +1 more source

Recent Advances and Perspectives on Field‐Effect Transistors for Artificial Visual Neuromorphic Systems

Advanced Science, EarlyView.
This review presents a comprehensive overview of FET‐based visual neuromorphic systems, covering their semiconductor materials, core device architectures, and operating mechanisms. It further reviews their implementation in emulating biological visual functions, addresses current technological challenges, and outlines future development directions. The
Liu Yaqian, Lang Menghua, Xu Yihang, Zhang Manyu, Lei Chunkang, Lu Xiaozhou, Dou Yi, Wang Lingli, Jiang Liying, Hu Yuanyuan, Chen Huipeng, Jiang Lang   +11 more
wiley   +1 more source

Silicon device performance measurements to support temperature range enhancement [PDF]

Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast
Askew, Ray, Bromstead, James, Cosby, Melvin, Johnson, R. Wayne, Nelms, R. Mark, Weir, Bennett   +5 more
core   +4 more sources

Semiconductor Switch: Key Components and Future Developments in Power Electronics [PDF]

MATEC Web of Conferences
The rapid development of modern industry has led to the expansion of the demand for high-end devices in a wider range of fields. Semiconductor switches have also become a popular research area as key components in electronic engineering. It also plays an
Ji Mengdie, Zhu Guli
doaj   +1 more source