Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation [PDF]
, 2023 Xiaoqing Yang +5 more
openalex +1 more source
Analysis of harmonics in subsea power transmission cables used in VSC-HVDC transmission systems operating under steady-state conditions [PDF]
, 2007 Subsea power cables are a critical component of a voltage-source converter-high-voltage direct current (VSC-HVDC) transmission system in any offshore electrical power scheme.
Bucknall, R.W.G., Chien, C.H.
core
A new lateral trench-gate conductivity modulated power transistor [PDF]
, 1999 In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have ...
Cai, J +4 more
core +2 more sources
InfoMat, EarlyView.Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim +9 more
wiley +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
Small, EarlyView.The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Adaptive Residual Useful Life Prediction for the Insulated-Gate Bipolar Transistors with Pulse-Width Modulation Based on Multiple Modes and Transfer Learning [PDF]
, 2023 Wujin Deng +6 more
openalex +1 more source
High-power active devices [PDF]
, 2006 Very high-power (HP) electronics represents a small part of the electronics market. In semiconductor terms, HP represents a world device market of 600 million euros out of a total 200 billion euros for all semiconductors—a mere 0.3 per cent. At the multi-
Carroll, E
core +1 more source
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Small, EarlyView.An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals, 2020 The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source