Results 81 to 90 of about 11,789 (277)
IEEE Access, 2020 Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online
Xiangxiang Liu +4 more
doaj +1 more source
Self-powered bipolar gate-driver power supply circuit for neutral-point-clamped converters [PDF]
, 2018 © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new ...
Bordonau Farrerons, José +3 more
core +1 more source
Small, EarlyView.ETM‐based chalcogenides exhibit rich structural diversity and tunable electronic and catalytic properties. This review critically summarizes structure–property–application relationships in ETM‐based chalcogenides, highlighting recent advances in electronic devices, electrocatalysis, and energy‐related applications, while outlining key challenges and ...
Sachin Jaidka +6 more
wiley +1 more source
Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector
IEEE Journal of the Electron Devices Society, 2020 In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff).
Ying Wang +6 more
doaj +1 more source
Emerging 2D Material Prototype Devices Toward Energy‐Efficient and Sustainable Optoelectronics
SusMat, EarlyView.Driven by the growing demand for efficient data processing in artificial intelligence, fully integrated 2D material All‐in‐One devices that integrate sensing, memory, and computing functions show rapid development. These devices deliver ultra‐low power consumption and high‐speed operation, offering great potential for next‐generation intelligent edge ...
Jiazheng Wang +4 more
wiley +1 more source
Reliability evaluation of MMC system considering working conditions
The Journal of Engineering, 2018 The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng +3 more
doaj +1 more source
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
High Voltage, EarlyView.ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
doaj +1 more source
A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs [PDF]
, 2019 The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke ...
Ghorbani, Hamidreza +3 more
core +2 more sources