Results 141 to 150 of about 61,402 (309)

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Topological Insulators 101

, 2014
We thought we knew all there was to know about band insulators back in the 1930s. However, in the last 10 years we have learnt that there distinct types of band insulators in 2 and 3 dimensions.
Murthy, Ganpathy
core   +1 more source

Online Measurement Method for Surface Charges of Basin Insulators Based on the Capacitive Electrostatic Probe

IET Science, Measurement & Technology
Operation voltage is disconnected before measuring surface charges on gas‐insulated transmission line (GIL) insulators (i.e., offline measurement). However, the spontaneous dissipation of surface charges reduces the accuracy.
Jiayi Liu, Xiaoqing Xie, Feng Wang, She Chen, Qiuqin Sun, Lipeng Zhong, Zhiyong Hu, Xianhao Fan, Fangwei Liang   +8 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Field Reduction Electrodes for the Possible Improvement in the Pollution Flashover Performance of Porcelain Insulators

, 2009
In this paper an attempt is made to study accurately, the field distribution for various types of porcelain/ceramic insulators used forhigh voltage transmission. The surface charge Simulation method is employed for the field computation.
Reddy, Subba B, Kumar, Udaya
core  

Magnetic excitations in Kondo insulators [PDF]

, 1993
Analytical and numerical analyses are performed for the spin dynamics in Kondo insulators (heavy-fermion insulators found among stoichiometric rare earth and actinide compounds).
Wang, Ziqiang, Lee, Dung-Hai
core  

Design of capacitive electrostatic probes for online measurement of surface charge on ±320 kV tri‐post insulators

IET Generation, Transmission & Distribution
Compared to offline measurement (interrupting the applied voltage before measurement), online measurement of surface charge on gas‐insulated transmission line (GIL) insulators effectively avoids the impact of spontaneous dissipation of charges. Thus, the
Jiayi Liu, Xiaoqing Xie, Feng Wang, She Chen, Qiuqin Sun, Lipeng Zhong, Xianhao Fan, Fangwei Liang   +7 more
doaj   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source