Results 141 to 150 of about 52,811 (317)

Field Reduction Electrodes for the Possible Improvement in the Pollution Flashover Performance of Porcelain Insulators

open access: yes, 2009
In this paper an attempt is made to study accurately, the field distribution for various types of porcelain/ceramic insulators used forhigh voltage transmission. The surface charge Simulation method is employed for the field computation.
Reddy, Subba B, Kumar, Udaya
core  

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

T-duality of topological insulators

open access: yes, 2015
Topological insulators and D-brane charges in string theory can both be classified by the same family of groups. In this paper, we extend this connection via a geometric transform, giving a novel duality of topological insulators which can be viewed as a
Thiang, G., Varghese, M.
core   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Multilayer High-Gradient Insulators [PDF]

open access: yes, 2006
High voltage systems operated in vacuum require insulating materials to maintain spacing between conductors held at different potentials, and may be used to maintain a nonconductive vacuum boundary.
Harris, J. R.   +12 more
core  

Simplified Topological Invariants for Interacting Insulators

open access: yes, 2012
We propose general topological order parameters for interacting insulators in terms of the Green’s function at zero frequency. They provide a unified description of various interacting topological insulators including the quantum anomalous Hall ...
Zhong Wang, Shou-Cheng Zhang
core   +1 more source

X‐Functionality–Driven Photocatalytic Hydrogen Evolution in 2D 4‐X‐PEA2SnI4 Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
We report a water‐based synthesis of 2D 4‐X‐PEA2SnI4 perovskite microcrystals with prominent photocatalytic (PC) activity for H2 production. The synergy between organic functionalization and HI‐derived iodide scavenges holes suppress octahedral distortion, and favor electron accumulation, enabling a PC H2 evolution ∼20 µmol·g−1 and long‐term stability ...
Taeyeon Kim   +21 more
wiley   +1 more source

Frractional Chern Insulators

open access: yes, 2013
International audienceThe interest in the field of topological insulators has exploded in recent years. Topological insulators are mainly one body problems, neglecting interactions.
Regnault, Nicolas
core  

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim   +6 more
wiley   +1 more source

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