Results 121 to 130 of about 12,698 (302)

Fitting of nonnegative physical models based on statistical divergence: application to thermally stimulated depolarization currents

Science and Technology of Advanced Materials: Methods
We propose a theoretical formalism for inferring the parameters of non-negative physical models via statistical divergence to generalise the fitting process beyond conventional methods.
Yasunobu Ando, Shusuke Kasamatsu, Suguru Iwasaki, Yumi Tanaka   +3 more
doaj   +1 more source

Inequivalent representations in the functional integral framework

, 2017
An important feature of Quantum Field Theory is the existence of unitarily inequivalent representations of canonical commutation relations. When one works with the functional integral formalism, it is not clear, however, how this feature emerges.
L Smaldone, SMALDONE, LUCA, BLASONE, Massimo, M Blasone, P Jizba, Jizba, P.   +5 more
core   +1 more source

AI‐Physics‐Experiment Trinity for Integrated Protein Dynamics Modeling

Advanced Science, EarlyView.
This review unites experiments, physics‐based simulations, and AI as a synergistic triad for protein dynamics modeling. It highlights integrative strategies, resolves sampling and forcefield bottlenecks, and outlines challenges and future directions for accurate, interpretable conformational ensemble prediction.
Chen Shi, Minying Low, Peng Xiu, Kresten Lindorff‐Larsen, Yong Wang   +4 more
wiley   +1 more source

Between Formalism and Discretion: Measuring Trends in Supreme Court Rhetoric

, 2019
This is the first study to use an empirical quantitative analysis to determine the nature of formalism in court decisions. Our analysis has revealed the complex interplay between different types of formalism in Supreme Court of Israel decisions and ...
Alberstein, Michal, Gabay-Egozi, Limor, Bogoch, Bryna   +2 more
core   +3 more sources

Updatable Closed‐Form Evaluation of Arbitrarily Complex Multiport Network Connections

Advanced Electronic Materials, EarlyView.
The inverse design of electrically large wave devices often uses reduced‐order multiport models with discrete optimization, requiring many evaluations of complex interconnections between subsystems that differ only in a few blocks. This paper introduces a closed‐form framework enabling efficient Woodbury low‐rank updates of related, previous ...
Hugo Prod'homme, Philipp del Hougne
wiley   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

Advanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith, Ryan D. McKenzie, Alban Joseph, Robert L. Stamps, Rair Macêdo   +4 more
wiley   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Finite-volume scattering on the left-hand cut

Journal of High Energy Physics
The two-particle finite-volume scattering formalism derived by Lüscher and generalized in many subsequent works does not hold for energies far enough below the two-particle threshold to reach the nearest left-hand cut.
A. Baião Raposo, M. T. Hansen
doaj   +1 more source

Normality in group rings

, 2008
Let KG be the group ring of a group G over a commutative ring K with unity. The rings KG are described for which xx(sigma)=x(sigma)x for all x=∑(g∈G)alfa(g)g∈KG, where x↦x(sigma)=∑(g∈G)alfa(g)f(g)sigma(g) is an involution of KG; here f:G→U(K) is a ...
Bódi, Viktor, Siciliano, S.
core  

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source