Results 91 to 100 of about 116,834 (265)

DNA‐Templated 2D Heterostructures as Phototriggered Dynamic Nanohybrids: From Releasing Molecular Loads to Controlling Enzyme Biocatalytic Function

Advanced Functional Materials, EarlyView.
DNA strands are employed both as dynamic linkers and nanoscale templates for the integration of Ag2S nanoparticles on MoS2, which in turn imparted photothermal responsiveness; this feature permits the selective cargo (fluorophore, quantum dots or an enzyme) release from the MoS2 surface in response to local heat induced by light irradiation.
Kai Chen, Haosen Miao, Weiying Hong, Matteo Palma   +3 more
wiley   +1 more source

A design of low-power portable broadband radio frequency signal detection pen

Dianzi Jishu Yingyong
This paper, prioritizing portability and low power consumption, innovatively proposes a pen-shaped portable RF signal detection pen for the first time.
Jia Bo, Zhang Runlin
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque

Advanced Electronic Materials
Antiferromagnets (AFM) hold significant promise as ideal candidates for high‐density and ultrafast memory applications. Electrical manipulation of exchange bias (EB) has emerged as an effective solution to integrate AFMs into magnetic memories as active ...
Ao Du, Daoqian Zhu, Zhiyang Peng, Zongxia Guo, Min Wang, Kewen Shi, Kaihua Cao, Chao Zhao, Weisheng Zhao   +8 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Investigation of SiC MOSFET Structures for Surge Robustness in the Third Quadrant Under Various $V_{\text{GS}}$ Biases

IEEE Open Journal of Power Electronics
In this work, SiC planar-gate MOSFET (PG-MOS), SiC short-channel (0.3$\mathbf {\mu m}$) MOSFET (SCMOS), and SiC JBSFET are tested for the third quadrant I-V temperature characteristics and surge current capability at different gate-source bias voltage ...
Xinbin Zhan, Yanjing He, Xi Jiang, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yuming Zhang   +7 more
doaj   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

Advanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng   +11 more
wiley   +1 more source

Realizing giant ferroelectricity in stable wz-Al1 − x B x N alloys by controlling the microstructure and elastic constant

npj Computational Materials
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su, Zhengmao Xiao, Xinhao Chen, Yong Huang, Zhenhua Lin, Jingjing Chang, Jincheng Zhang, Yue Hao   +7 more
doaj   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

High Performance Self-Powered Photodetectors Based on Graphene Nanoribbons/Al₂O₃/InGaZnO Heterojunctions

IEEE Photonics Journal
Self-powered photodetectors which operate without external power sources hold immense promise in future photodetection systems. To achieve high-performance self-powered optoelectronic devices, efficient electron-hole pair separation is critical to ...
Xiaoling Ye, Xiaoxiao Zheng, Lei Han, Yu Sun, Liang Wang, Ziheng Li, Wencheng Liu, Benqing Liu, Nan Han, Safia Khan, Syed Hassan Mujtaba Jafri, Mingyang Wang, Yafei Ning, Hu Li   +13 more
doaj   +1 more source