Results 81 to 90 of about 115,945 (259)

Soft Mechanical‐Electrical Logic Using Liquid Metal‐Filled 3D‐Printed Architectures

Advanced Engineering Materials, EarlyView.
We present 3D‐printed soft mechanical–electrical logic elements that use liquid metal–filled silicone tubes actuated by thermoplastic polyurethane/polylactic acid (TPU/PLA) architectures to produce Boolean operations. Complementary normally open and normally closed unit cells perform repeatable binary transitions and can be combined into more complex ...
Christoph Lehmann, Ryan Kalgreen, Laura M. Comella   +2 more
wiley   +1 more source

Enhanced Strength and Corrosion Resistance of Ti‐13Nb‐12Ta‐10Zr‐4Sn Alloy by Aging Treatment

Advanced Engineering Materials, EarlyView.
This work systematically investigates the effect of aging treatment on mechanical properties and corrosion behavior of vacuum arc‐melted Ti‐13Nb‐12Ta‐10Zr‐4Sn alloy. Owing to the increased α″ martensite, strength and corrosion resistance were significantly enhanced by aging treatment.
Yuhua Li, Rong Zhao, Qian Zhang, Haojie Wang, Yujing Liu, Lai‐Chang Zhang   +5 more
wiley   +1 more source

Scaling Logic Area With Multitier Standard Cells

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While the footprint of digital complementary metal-oxide–semiconductor (CMOS) circuits has continued to decrease over the years, physical limitations for further intralayer geometric scaling become apparent.
Florian Freye, Christian Lanius, Hossein Hashemi Shadmehri, Diana Gohringer, Tobias Gemmeke   +4 more
doaj   +1 more source

Direct Metal Deposition of Graphene–Ti28Nb35.4Zr Matrix Composites With Enhanced Mechanical, Corrosion, and Biocompatibility Properties for Bone Implants

Advanced Engineering Materials, EarlyView.
Graphene nanoplatelet (0.1 wt.%) reinforcement significantly enhances the performance of β Ti‐28Nb‐35.4Zr alloy. Grain refinement, reduced water contact angle, and improved surface characteristics promote osteoblast adhesion and complete surface coverage after 7 days.
Khurram Munir, Jixing Lin, Yuncang Li, Li Zhu, Paul F. A. Wright, Cuie Wen   +5 more
wiley   +1 more source

Electrochemical Behavior of Flame‐Sprayed Sc‐Doped AlCoCrFeMo High‐Entropy Alloy Coatings in 3.5% Sodium Chloride Solution

Advanced Engineering Materials, EarlyView.
Scandium (Sc)‐doped AlCoCrFeMo HEA coatings are fabricated via flame spraying with 0.1, 0.3, and 0.5 wt% Sc additions. Among these, the HEA‐Sc0.3 coating exhibits the highest corrosion resistance, indicated by a more positive corrosion potential and lower current density.
Pankaj Kumar, Akash Vyas, Mohammad Aatif Qazi, Nashit Jalal, Maria Ophelia Jarligo, Mostafa Yakout, Jing Liu, André McDonald   +7 more
wiley   +1 more source

A high-efficiency modeling method for analog integrated circuits

Chip
Integrated circuits (ICs) are the foundation of information technology development. The optimal design scheme of an analog IC is determined by iteratively running the simulation software and comparing the performance metrics.
Dongdong Chen, Yunqi Yang, Xianglong Wang, Di Li, Guoqing Xin, Yintang Yang   +5 more
doaj   +1 more source

An Experimental High‐Throughput Approach for the Screening of Hard Magnet Materials

Advanced Engineering Materials, EarlyView.
An entire workflow for the high‐throughput characterization and analysis of compositionally graded magnetic films is presented. Characterization protocols, data management tools and data analysis approaches are illustrated with test case Sm(Fe, V)12 based films.
William Rigaut, Pierre Le Berre, Hamdi Jaballah, Lukas Fink, Victor Poline, Richard Haettel, Stéphane Grenier, Gilbert Chahine, Ewen Bellec, Guillaume Buatier, Wilfried Hortschitz, Santa Pile, Thomas Schrefl, Nils Blanc, Yuan Hong, Thibaut Devillers, Nora M. Dempsey   +16 more
wiley   +1 more source

Investigation of SiC MOSFET Structures for Surge Robustness in the Third Quadrant Under Various $V_{\text{GS}}$ Biases

IEEE Open Journal of Power Electronics
In this work, SiC planar-gate MOSFET (PG-MOS), SiC short-channel (0.3$\mathbf {\mu m}$) MOSFET (SCMOS), and SiC JBSFET are tested for the third quadrant I-V temperature characteristics and surge current capability at different gate-source bias voltage ...
Xinbin Zhan, Yanjing He, Xi Jiang, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yuming Zhang   +7 more
doaj   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque

Advanced Electronic Materials
Antiferromagnets (AFM) hold significant promise as ideal candidates for high‐density and ultrafast memory applications. Electrical manipulation of exchange bias (EB) has emerged as an effective solution to integrate AFMs into magnetic memories as active ...
Ao Du, Daoqian Zhu, Zhiyang Peng, Zongxia Guo, Min Wang, Kewen Shi, Kaihua Cao, Chao Zhao, Weisheng Zhao   +8 more
doaj   +1 more source