Results 141 to 150 of about 8,641 (254)

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun   +15 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

Integrated leak rate test of reactor containment vessel for experimental fast reactor "Joyo"

open access: yesJournal of the Atomic Energy Society of Japan / Atomic Energy Society of Japan, 1985
TAMURA, Masaaki, ISOZAKI, Kazunori
openaire   +2 more sources

Electrically Tuning Electromagnetic Wave Shielding in Phase Engineered 1T/2H‐MoS2‐Based Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Sub‐millimeter‐thick phase‐engineered 1T/2H‐MoS2 structures enable electrically tunable electromagnetic interference shielding through active modulation of microwave absorption and reflection. The coexistence of metallic and semiconducting phases, combined with a PVA/KOH gel electrolyte, provides dynamic control over charge transport and interfacial ...
Mustafa Akyol   +3 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout   +19 more
wiley   +1 more source

Deciphering Intricacies in Directional CO2 Conversion From Electrolysis to CO2 Batteries

open access: yesAdvanced Energy Materials, EarlyView.
This review will delve into the inherent connections and distinctions of CO2‐directed conversion in ECO2RR and CO2 batteries, in terms of product types, catalyst selection, catalytic mechanisms, and electrochemical performances, while proposing a benchmarking framework for the evaluation of CO2 batteries and innovative CO2 battery configurations for ...
Changfan Xu   +5 more
wiley   +1 more source

Assessing Biomass-Based Methanol Production via Electrified Gasification and Solar-Assisted CO<sub>2</sub> Utilization. [PDF]

open access: yesInd Eng Chem Res
Jadoon UK   +5 more
europepmc   +1 more source

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