Results 1 to 10 of about 1,503 (107)
With the development of a distributed generation, direct current (DC) load and energy‐storage equipment, voltage‐source‐converter‐based medium‐voltage DC systems (VSC‐MVDC) have attracted more attention due to its low power consumption, high reliability,
Muhammad Junaid +6 more
doaj +2 more sources
Integrated Gate Commutated Thyristor: From Trench to Planar [PDF]
The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been verified experimentally with 4.5kV devices fabricated on 4-inch Si wafers.
Thomas Stiasny +2 more
exaly +3 more sources
Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application [PDF]
This study presents a physics‐based compact model of the integrated gate‐commutated thyristor (IGCT) with multiple effects for the high‐power application. The proposed model has both acceptable accuracy and computation time requirement, which is suitable for system level circuit simulation and IGCT's whole wafer modelling work.
Gang Lyu, Chijie Zhuang, Rong Zeng
exaly +3 more sources
A novel controllable capacitor commutation based superconducting hybrid direct current breaker [PDF]
Featuring low power loss and high reliability, voltage source converter medium voltage direct current (VSC-MVDC) systems have been widely employed for grid-tied renewable energy applications.
Yang Xu +5 more
doaj +2 more sources
4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode [PDF]
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts.
Neophytos Lophitis +2 more
exaly +3 more sources
This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as ...
Shiping Chen +6 more
doaj +2 more sources
New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop [PDF]
© 2016 IEEE. A new design approach for bi-mode gatecommutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable
Neophytos Lophitis +2 more
exaly +4 more sources
Commutation failure (CF) is an inherent problem faced by line commutated converter high voltage direct current (LCC‐HVDC) technology. To completely solve the problem of CF, we have proposed a novel hybrid commutated converter (HCC) technology based on ...
Zongze Wang +7 more
doaj +2 more sources
Grid connection of remote offshore wind‐parks uses high‐voltage direct current technology and in order to reduce costs and losses and maximise profitability, semiconductor power losses must be minimised.
Davin Guedon +5 more
doaj +1 more source
A Review of Thyristor Based DC Solid-State Circuit Breakers
Characterized by ultra-fast and arc-free fault clearing, solid state circuit breakers (SSCBs) are getting increasing popularity with the latest development of advanced power semiconductor devices, like the silicon carbide (SiC) MOSFETs. On the other hand,
Xiaoqing Song +3 more
doaj +1 more source

