Results 201 to 210 of about 921,634 (317)

Meat Analog Products: Current Worldwide Scenario and Future Perspectives in Consumption and Regulation. [PDF]

open access: yesFoods
Cochlar TB   +5 more
europepmc   +1 more source

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

open access: yesAdvanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang   +13 more
wiley   +1 more source

Ultrahigh‐Linear Bio‐Inspired Janus Elastomeric Strain Sensor with High Sensitivity and Stretchability via Surface Wrinkle Engineering

open access: yesAdvanced Science, EarlyView.
A bio‐inspired Micro‐wrinkled Janus elastomeric flexible strain sensor mimicking wrinkled‐leaf viburnum is developed. Endowed with a synergistic sensing mechanism including wrinkle‐guided microcracks, modulus‐gradient‐driven strain division, and a parallel conductive circuit, it achieves ultra‐high linearity, sensitivity, wide strain range, and ...
Jing Lin   +11 more
wiley   +1 more source

Enhanced Energy Harvesting Performance of Biodegradable Polylactic Acid/3D Anodic Aluminum Oxide Composite Triboelectric Nanogenerators

open access: yesAdvanced Electronic Materials, EarlyView.
Polylactic acid (PLA) embedded in 3D anodic aluminum oxide (3D‐AAO) yields triboelectric nanogenerators (TENGs) with ɛeff = 5.1, delivering 20V and 108µW both per cm2. These agglomeration‐resistant, compostable/biocompatible devices retain 95% output after 104 cycles, enabling robust self‐powered Internet of Things (IoT) sensing.
Carlos G. Cobos   +5 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss   +21 more
wiley   +1 more source

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