Results 91 to 100 of about 7,275 (258)

AI‐Assisted Digital Single‐Molecule Activity Tracker for Decoupling Intrinsic Heterogeneity from Photo‐Oxidative Damage in High‐Photon‐Flux Enzymology

Advanced Science, EarlyView.
Employing a digital single‐molecule activity tracker (dSMAT), this research demonstrates that high‐photon‐flux irradiation drives progressive oxidative scarring in polymerases. Unlike simple thermal denaturation, real‐time kinetic tracking dynamically visualizes enzymes degrading into multiple impaired subpopulations.
Anran Zheng, Qi Yang, Jinze Li, Fuqiang Ma, Xuefeng Wang, Zhen Guo, Chuanyu Li, Dongshu Li, Jia Yao, Zhiqi Zhang, Wei Zhang, Lianqun Zhou   +11 more
wiley   +1 more source

Chiral‐Induced Spin Selectivity Effect in a 1 nm Thin 1,1′‐Binaphthyl‐2,2′‐diyl Hydrogenphosphate Self‐Assembled Monolayer on Nickel Oxide

Advanced Science, EarlyView.
A self‐assembled monolayer (≈0.9 nm) of an axially chiral binaphthol phosphoric acid derivative on a ferromagnetic Ni/NiOx substrate shows chiral‐induced spin selectivity (CISS) magnetoresistance of 50%–80%. This thermally and chemically robust functional stack shows the way towards practical spintronic devices based on the CISS effect.
Abin Nas Nalakath, Christian Pfeiffer, Anu Gupta, Franziska Schölzel, Michael Zharnikov, Georgeta Salvan, Ron Naaman, Marc Tornow, Peer Kirsch   +8 more
wiley   +1 more source

Synergistic Interface Engineering via Buffer Layer and UVO Treatment for High‐Performance PbS Quantum Dot Near‐Infrared Photodiodes

Advanced Science, EarlyView.
A dual‐interface strategy combining a solvent‐orthogonal Poly‐TPD buffer with UV–ozone tuning of PbS‐EDT reconstructs interfacial energetics and defect chemistry in PbS CQD photodiodes. The optimized interface suppresses shunt‐ and trap‐related leakage, reduces noise, and enables high‐detectivity near‐infrared detection with imaging capability ...
Chuan Wei, Jun Han, Ning Feng, Li Yan, Hao Sun, Yuanhong Gao, Meili Xu, Guodan Wei, Hong Meng   +8 more
wiley   +1 more source

“After torture, everything changed”: the unpacking of trauma from torture with interpretative phenomenological analysis and Merleau-Ponty’s theory of the lived body

BMC Psychology
Background Trauma from torture is expressed primarily through bodily sensations and emotions, reflecting its deep imprint on the body’s memory. Merleau-Ponty’s existential phenomenology, which emphasizes the lived body, provides a valuable framework for ...
Ana Carla S. P. Schippert, Ellen Karine Grov, Ann Kristin Bjørnnes   +2 more
doaj   +1 more source

Multiscale Coupling From Mastication to Retronasal Aroma Perception: The PG‐DTCFN Model and Multiphysics Simulation

Advanced Science, EarlyView.
Using grilled lamb skewers as a model system, this work builds a multiscale coupling framework from oral processing to retronasal aroma perception, reveals dual‐kinetic release patterns and Electroencephalogram‐characterized central encoding features, and proposes an interpretable physics‐guided deep learning model validated by multiphysics simulation,
Che Shen, Xiongfeng He, Zihao Li, Zidong Chen, Jiajin Sun, Xinyu Jiang, Yunhui Zhang, Lizhang Wu, Ran Wang, Jingnan Lu, Bo Wang, Kezhou Cai, Baocai Xu   +12 more
wiley   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source