Results 101 to 110 of about 7,275 (258)
Advancing Energy Materials by In Situ Atomic Scale Methods
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
The molecular design strategy that integrates both side chain and backbone engineering in diketopyrrolopyrrole‐based conjugated polymers to identify the optimal balance between doping efficiency and microstructural order is demonstrated. Comprehensive spectroscopic, electrochemical, morphological, and structural characterizations reveal that the ...
Taewoong Han +13 more
wiley +1 more source
Degradation Pathways of Silicon‐Based Anodes in Lithium‐Ion Batteries
Silicon‐based anodes undergo degradation through five primary pathways: (1) mechanical and structural deterioration of the active material, (2) loss of electrode integrity and electrical contact, (3) mechanical instability of the solid electrolyte interphase (SEI), characterized by repetitive fracture and deformation, (4) chemical instability of the ...
Yoon Jeong Choi +3 more
wiley +1 more source
An interpretative phenomenological analysis of the embodiment of artificial limbs
To gain an understanding of the embodied perceptual experience of successful prosthesis.The data for this study were transcripts derived from in-depth semi-structured e-mail (n=21) and face-to-face (n=14) interviews, and the documentary analysis of an e-mail discussion group for prosthesis users.
openaire +5 more sources
Redesigning Interlayers for Anode‐Free Batteries: Harnessing Continuity and Metal Inventory
Interlayers for anode‐free batteries must provide continuous interfacial coverage while remaining thin enough to preserve the finite cathode‐derived active‐metal inventory. This Perspective couples thin‐film closure with stoichiometric active‐metal consumption to reveal practical design windows across chemistry, substrate roughness, cathode loading ...
Rosalía Cid, Lorenzo Fallarino
wiley +1 more source
CFD modeling and sensitivity‐guided design of silicon filament CVD reactors
Abstract Filament‐based chemical vapor deposition (CVD) for silicon (Si) coatings is often treated as an adaptation of planar deposition. But this overlooks fundamental shifts in transport phenomena and reaction kinetics. In filament CVD, the filament acts as a substrate, heat source, and flow disruptor simultaneously. In this work, we ask: What really
G. P. Gakis +8 more
wiley +1 more source
Gradually bent perylene bisimides (PBIs) isolate structural distortion as the sole variable and exhibit negligible intersystem crossing, uncovering rapid vibrational dephasing as the dominant driver of internal conversion through excited‐state vibrational landscape reorganization.
Wei Zhang +8 more
wiley +2 more sources
A practical electrodialysis model for accelerating system development
Abstract Empirical optimization of electrodialysis (ED) is dependent on repetitive experiments with incremental adjustments, which is cost prohibitive at scale. While models can reduce the costs associated with optimization and scale‐up, existing ED models are limited in application to specific use cases and tend to be developed for the exploration of ...
Smith Pittman +3 more
wiley +1 more source
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization
Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee +3 more
wiley +1 more source

