Results 121 to 130 of about 22,265,327 (251)
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini +9 more
wiley +1 more source
Advancing Energy Materials by In Situ Atomic Scale Methods
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
School staffs’ experiences of supporting students’ social, emotional and mental health needs: an interpretative phenomenological analysis [PDF]
Social Emotional Mental Health (SEMH) is a growing concern in education, and school staff face mounting responsibility to provide support for students with complex SEMH needs.
Childs, C., Cresswell, S., Fox, L
core +1 more source
The molecular design strategy that integrates both side chain and backbone engineering in diketopyrrolopyrrole‐based conjugated polymers to identify the optimal balance between doping efficiency and microstructural order is demonstrated. Comprehensive spectroscopic, electrochemical, morphological, and structural characterizations reveal that the ...
Taewoong Han +13 more
wiley +1 more source
Degradation Pathways of Silicon‐Based Anodes in Lithium‐Ion Batteries
Silicon‐based anodes undergo degradation through five primary pathways: (1) mechanical and structural deterioration of the active material, (2) loss of electrode integrity and electrical contact, (3) mechanical instability of the solid electrolyte interphase (SEI), characterized by repetitive fracture and deformation, (4) chemical instability of the ...
Yoon Jeong Choi +3 more
wiley +1 more source
Abstract Sorption in glassy polymer membranes is commonly modeled with the dual‐mode sorption (DMS) model. Fitting the DMS model to sorption isotherms presents challenges, as multiple parameter sets may prove satisfactory. This work presents pyDMS, an open‐source Python package for the computation of DMS parameters obtained via a physics‐informed ...
Brandon C. Tapia +4 more
wiley +1 more source
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Hydrogen‐Bonding Order Associated With Radical Delocalization in Layered Organic Cathode Materials
“TAQ” and TAPT share the same pyrazine‐based molecular structure but differ in degree of crystallinity. Combined x‐ray scattering, solid‐state NMR, MicroED, and EPR reveal that “TAQ”'s higher crystallinity and ordered hydrogen‐bonding network are associated with enhanced radical delocalization and conductivity, highlighting structural order as a design
Alae Eddine Lakraychi +14 more
wiley +2 more sources
‘Interpretative phenomenological analysis and ecological theory: a combined approach to understanding disruptive student behaviour’ [PDF]
Behaviour management in schools is still a topic of significant discourse, from the classroom to the highest levels of Government. Research has suggested that some of the dominant theories of behaviourism which underpin current policy may limit our ...
Hughes, L.
core
Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization
Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee +3 more
wiley +1 more source

