Enhancing multilevel inverter performance through open-end winding motors and SVPWM series compensation. [PDF]
Nalinakshan Latha S +2 more
europepmc +1 more source
Blue phosphorescent OLEDs remain limited by poor operational stability. Here, a unified analytical framework integrating transient photoluminescence and magneto‐electroluminescence is developed to correlate intrinsic material photophysics with electrically driven degradation.
Hakjun Lee, Bum June Park, Taekyung Kim
wiley +1 more source
Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]
Wang W +11 more
europepmc +1 more source
A dye‐based photoinitiator acting as a structure‐directing element, guides the formation of a cholesteric polymer network that behaves as a chirped photonic structure with dissipative chiral coupling. Photopolymerization freezes a depth‐dependent helical pitch, broadening the Bragg resonance spectrum.
Alfredo Mazzulla +2 more
wiley +1 more source
Generic logic block based on bias-gated 2D MoS<sub>2</sub> transistors. [PDF]
Wei X +10 more
europepmc +1 more source
Time‐Resolved Magnetization Switching Dynamics Driven by Orbital Torques
Du et al. reveal nanosecond magnetization switching driven by orbital currents using time‐resolved Hall detection. The measurements separate domain nucleation from domain wall propagation and show that Joule heating strongly assists switching by lowering energy barriers.
Ao Du +4 more
wiley +1 more source
Dynamics of genetic circuits in Pseudomonas protegens.
Rico J +3 more
europepmc +1 more source
Reversible Thickness Engineering in Amorphous In<sub>2</sub>O<sub>3</sub> Transistors. [PDF]
Pan YY +8 more
europepmc +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source
A CNTFET based process variation resilient SRAM design for stable low power and half select free operation. [PDF]
Haq SU +5 more
europepmc +1 more source

