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Ion Implantation of ZnO by the Group IV elements Si and Ge: Doping, defects and nanocrystallization
, 2016 Bjørn Brevig Aarseth
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Mesoporous Silica Nanoparticles in Biomedicine: Advances and Prospects
Advanced Materials, EarlyView.Mesoporous silica nanoparticles offer unique properties like high surface area, tunable pores, and functionalization. They excel in drug delivery, tissue engineering, and stimuli‐responsive therapies, enabling targeted and controlled treatments. With roles in cancer therapy and diagnostics, their clinical translation requires addressing challenges in ...
Miguel Manzano, María Vallet‐Regí
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Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping
IEEE Electron Device Letters, 2019Depletion-mode vertical Ga2O3 metal-oxide-semiconductor field-effect transistors featuring a current aperture were developed on a halide vapor phase epitaxial drift layer grown on a bulk $\beta $ -Ga2O3 (001) substrate. Three ion implantation steps were
M. Wong +4 more
semanticscholar +1 more source
2023
This chapter discusses the ion implantation process of silicon processing technology in depth. The chapter gives an in-depth insight into various aspects of the ion implantation process and ion-implanted silicon systems commonly encountered in a silicon process.
Sunipa Roy +3 more
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This chapter discusses the ion implantation process of silicon processing technology in depth. The chapter gives an in-depth insight into various aspects of the ion implantation process and ion-implanted silicon systems commonly encountered in a silicon process.
Sunipa Roy +3 more
openaire +2 more sources
Japanese Journal of Applied Physics, 2019
We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor (MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V, by applying the ...
R. Tanaka +4 more
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We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor (MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V, by applying the ...
R. Tanaka +4 more
semanticscholar +1 more source
, 2020
Triboelectric materials and their modification methods are the cornerstones for fabricating triboelectric nanogenerators (TENGs). Numerous modification methods have been proposed for TENGs, while a highly effective and long-term stable method is still ...
Shuyao Li +9 more
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Triboelectric materials and their modification methods are the cornerstones for fabricating triboelectric nanogenerators (TENGs). Numerous modification methods have been proposed for TENGs, while a highly effective and long-term stable method is still ...
Shuyao Li +9 more
semanticscholar +1 more source
1994
Abstract Ion implantation involves the bombardment of a solid material with medium-to-high-energy ionized atoms and offers the ability to alloy virtually any elemental species into the near-surface region of any substrate. This article describes the fundamentals of the ion implantation process and discusses the advantages, limitations ...
James K. Hirvonen, Bruce D. Sartwell
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Abstract Ion implantation involves the bombardment of a solid material with medium-to-high-energy ionized atoms and offers the ability to alloy virtually any elemental species into the near-surface region of any substrate. This article describes the fundamentals of the ion implantation process and discusses the advantages, limitations ...
James K. Hirvonen, Bruce D. Sartwell
openaire +1 more source