Results 51 to 60 of about 154,212 (298)

Fatigue Crack Initiation and Growth in Nanocrystalline Ni at Multiple Length‐Scales

open access: yesAdvanced Engineering Materials, EarlyView.
Overview of miniaturized in situ SEM fatigue setup and resultant fatigue crack growth data for nanocrystalline Ni. The presented study focuses on the analysis of fatigue crack growth rate (FCGR) in focused ion beam‐notched microcantilevers prepared from nanocrystalline (NC) Ni as a model material.
Igor Moravcik   +7 more
wiley   +1 more source

Highly-tunable formation of nitrogen-vacancy centers via ion implantation

open access: yes, 2014
We demonstrate highly-tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15N+ ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography.
Atkins, Z. J.   +3 more
core   +1 more source

Hydrogen induced optically-active defects in silicon photonic nanocavities [PDF]

open access: yes, 2014
This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project.
Boninelli, S.   +10 more
core   +1 more source

Enhanced Strength and Corrosion Resistance of Ti‐13Nb‐12Ta‐10Zr‐4Sn Alloy by Aging Treatment

open access: yesAdvanced Engineering Materials, EarlyView.
This work systematically investigates the effect of aging treatment on mechanical properties and corrosion behavior of vacuum arc‐melted Ti‐13Nb‐12Ta‐10Zr‐4Sn alloy. Owing to the increased α″ martensite, strength and corrosion resistance were significantly enhanced by aging treatment.
Yuhua Li   +5 more
wiley   +1 more source

Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: The ASPIC and ASCII Vacuum Chambers

open access: yesCrystals, 2022
Solid-state physics research has long employed radioactive isotopes to investigate the crystallographic, electric and magnetic properties of nanostructures.
Koen van Stiphout   +3 more
doaj   +1 more source

Copper Nanocrystallization in Anodic Oxide Films of Ti–Cu‐Based Bulk Metallic Glass and Its Effect on the Corrosion Resistance and Cytocompatibility

open access: yesAdvanced Engineering Materials, EarlyView.
Viktoriia Shtefan, Thorgund Nemec, Ute Hempel, Annett Gebert and coworkers demonstrate that anodic treatment of Ti–Cu‐based metallic glass in a nontoxic pyrophosphate electrolyte forms a protective bilayered Ti/Zr‐oxide film enriched with Cu nanocrystals.
Viktoriia Shtefan   +8 more
wiley   +1 more source

Characterization of SiGe/Si Heterostructures Formed by Ge+ and C+ Implantation [PDF]

open access: yes, 1990
Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium‐implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed.
Fukami, Akira   +3 more
core   +1 more source

Direct Metal Deposition of Graphene–Ti28Nb35.4Zr Matrix Composites With Enhanced Mechanical, Corrosion, and Biocompatibility Properties for Bone Implants

open access: yesAdvanced Engineering Materials, EarlyView.
Graphene nanoplatelet (0.1 wt.%) reinforcement significantly enhances the performance of β Ti‐28Nb‐35.4Zr alloy. Grain refinement, reduced water contact angle, and improved surface characteristics promote osteoblast adhesion and complete surface coverage after 7 days.
Khurram Munir   +5 more
wiley   +1 more source

Formation of optical planar waveguides on fused quartz by MeV ion implantation

open access: yesIET Optoelectronics
The optical losses and the refractive index change of optical planar waveguides formed by MeV ion implantation were correlated with the experimental ion implantation parameters. Direct ion implantation was performed by means of carbon, silicon and copper
José‐Miguel Zarate‐Reyes   +4 more
doaj   +1 more source

Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment

open access: yesEast European Journal of Physics
We have studied the process of ion implantation at small-angle ion bombardment of SiO2 (001) film at low values of initial energy (up to 5 keV). Along with scattered O+ ions, ion implantation is observed. It has shown that the geometric parameters of the
U.O. Kutliev   +3 more
doaj   +1 more source

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