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Doping Technologies for Silicon‑Based Semiconductors: Comparison and Future Outlook [PDF]

MATEC Web of Conferences
Doping technology, as a core technology in the semiconductor industry, serves as a critical means for regulating the electrical properties of semiconductor materials.The technological level determines the chip’s property and process limit.Both the ...
Zhang Xirui
doaj   +1 more source

Spectroscopic ellipsometry modelling of Cr+ implanted copper oxide thin films

Scientific Reports, 2023
In this paper, we present modelling of spectroscopic ellipsometry data. The measured samples are thin films of copper oxides modified with the ion implantation method. The samples were prepared using reactive magnetron sputtering.
K. Ungeheuer, K. W. Marszalek, M. Mitura-Nowak, A. Rydosz   +3 more
doaj   +1 more source

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

Advanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali, Magali Gregoire, Matys Guyard, Tatiana Itina, David Grojo, Pol Sopeña   +5 more
wiley   +1 more source

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Applied Sciences, 2020
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation.
Priya Darshni Kaushik, Gholam Reza Yazdi, Garimella Bhaskara Venkata Subba Lakshmi, Grzegorz Greczynski, Rositsa Yakimova, Mikael Syväjärvi   +5 more
doaj   +1 more source

Low energy ion-solid interactions: a quantitative experimental verification of binary collision approximation simulations

Materials Research Express, 2023
Ultra-low energy ion implantation has become an attractive method for doping of two-dimensional materials and ultra-thin films. The new dynamic Monte Carlo program IMINTDYN based on the binary collision approximation allows a reliable prediction of low ...
Hans Hofsäss, Felix Junge, Patrick Kirscht, Koen van Stiphout   +3 more
doaj   +1 more source

Strain‐Programmable Luminescent Adhesive Patch With Tartrazine‐Mediated Optical Skin Clearing for Photochemical Tissue Bonding

Advanced Functional Materials, EarlyView.
We propose a suture‐complementary approach that integrates optical skin clearing with a strain‐programmable luminescent adhesive patch. Hyaluronic acid promotes transdermal delivery of tartrazine to improve optical clearing and stabilizes its interaction with a photosensitizer. Optical clearing increases the penetration depth of visible light into skin,
Seong‐Jong Kim, Kyungjoo Jo, Kwanghyeon Park, Jun Hee Kim, Jong Hyeong Cho, Inhoo Choi, Sei Kwang Hahn   +6 more
wiley   +1 more source

Ion implantation of CdTe single crystals

EPJ Web of Conferences, 2017
Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic ...
Wiecek Tomasz, Popovich Volodymir, Bester Mariusz, Kuzma Marian   +3 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

Advanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee, Byung Ik Park, Gihyeon Yim, Hyunjae Yoo, Sangjun Ma, Jundong Park, Jeong‐Yun Sun   +6 more
wiley   +1 more source

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

Advanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin, Long‐Qing Chen, Dean R. Evans, Venkatraman Gopalan   +5 more
wiley   +1 more source