Results 41 to 50 of about 154,212 (298)
Deterministic Detection of Single Ion Implantation
Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead +6 more
wiley +1 more source
A thin layer was formed on the surface of the AISI 316L substrate by the process of nitrogen ion implantation at a vacuum pressure of 10-6 torr, a current of 50 mA for 90 minutes with the implantation energy of 20, 40 and 60 keV.
E. U. K. Maliwemu +5 more
doaj
Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation.
Priya Darshni Kaushik +5 more
doaj +1 more source
Ultra-low energy ion implantation has become an attractive method for doping of two-dimensional materials and ultra-thin films. The new dynamic Monte Carlo program IMINTDYN based on the binary collision approximation allows a reliable prediction of low ...
Hans Hofsäss +3 more
doaj +1 more source
Selenium was incorporated into a sol–gel‐derived bioactive glass to enable sustained therapeutic ion release. The selenium‐containing glass preserved bioactivity while selectively inducing cytotoxicity in osteosarcoma cells and maintaining osteoblastic viability.
Breno Rocha Barrioni +7 more
wiley +1 more source
It has been shown that many of the phenomena related to the formation of "tails" in the low-concentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials.
A.P. Kavaliova +75 more
core +1 more source
Compositon of Tantalum Nitride Thin Films Grown by Low-Energy Nitrogen Implantation: A Factor Analysis Study of the Ta 4f XPS Core Level [PDF]
Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5-5keV.
A. Arranz +26 more
core +1 more source
Time‐Dependent Oxidation and Scale Evolution of a Wrought Co/Ni‐Based Superalloy
This study shows how a new wrought Co/Ni‐based superalloy resists oxidation at 800 ∘$^\circ$C. The oxide scale changes from rough, fast‐growing spinel to a dense, protective chromia–alumina layer. Atom probe analysis reveals tiny refractory‐rich bubbles at the interface that mark the transition to long‐term, diffusion‐controlled protection ...
Cameron Crabb +6 more
wiley +1 more source
Ion implantation of CdTe single crystals
Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic ...
Wiecek Tomasz +3 more
doaj +1 more source
High efficiency single quantum well graded-index separate-confinement heterostructure lasers fabricated with MeV oxygen ion implantation [PDF]
Single quantum well AlGaAs/GaAs graded-index separate-confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized subsequent thermal annealing.
Chen, H. Z. +6 more
core +1 more source

