Results 41 to 50 of about 1,366,968 (297)

Adaptive Foam 3D Printing of Ultralight and Multifunctional Materials

open access: yesAdvanced Engineering Materials, EarlyView.
Adaptive foam 3D printing, enabled by expandable microspheres, imparts cellular structures to thermoplastic and thermosetting polymers, manufactured through a variety of processes including fused filament fabrication, direct ink writing, digital light processing, and inkjet printing.
Nariman Rajabifar, Amir Ameli
wiley   +1 more source

Effect of the Pre-Shot Peening and Nitrogen Ion Implantation Combined Surface Treatments on the Surface Structure and Properties of Gear Steel 16Cr3NiWMoVNbE

open access: yesMetals, 2022
Transmission engineering components need to fulfill requirements for adequate wear resistance and fatigue resistance, which are related to their surface properties.
Chunling Xu   +5 more
doaj   +1 more source

Comparative Study of 4H-SiC UV-Sensors with Ion Implanted and Epitaxially Grown p-Emitter

open access: yes, 2022
S.110-113In this study, a first detailed comparison of the spectral responsivity and internal quantum efficiency (IQE) of 4H-SiC UV sensors with ion implanted and epitaxially grown p-emitter is presented.
Matthus, C.D.   +3 more
core   +1 more source

Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

open access: yesAdvanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang   +6 more
wiley   +1 more source

Corrosion fatigue crack propagation of AISI 316L by nitrogen ion implantation in simulated body fluid

open access: yesMetalurgija, 2021
A thin layer was formed on the surface of the AISI 316L substrate by the process of nitrogen ion implantation at a vacuum pressure of 10-6 torr, a current of 50 mA for 90 minutes with the implantation energy of 20, 40 and 60 keV.
E. U. K. Maliwemu   +5 more
doaj  

Doping Technologies for Silicon‑Based Semiconductors: Comparison and Future Outlook [PDF]

open access: yesMATEC Web of Conferences
Doping technology, as a core technology in the semiconductor industry, serves as a critical means for regulating the electrical properties of semiconductor materials.The technological level determines the chip’s property and process limit.Both the ...
Zhang Xirui
doaj   +1 more source

Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics

open access: yesMicromachines, 2023
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream.
Michael Titze   +7 more
doaj   +1 more source

Modification of polypropylene films for thin film capacitors by ion implantation

open access: yes, 2022
4 S.Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose ...
Birnbaum, E.   +4 more
core   +1 more source

Feasibility and Limitations of the Advanced Replica Process for Bioactive Glasses

open access: yesAdvanced Engineering Materials, EarlyView.
Periodic 3D‐printed Kelvin‐cell templates enable a controlled advanced replica process for fabricating highly porous glass lattices. Across P45K9, 45S5, and 13–93, material‐dependent differences in coating, burnout, and shrinkage lead to distinct strut morphologies, while comparable final porosities of 83%–88% are retained.
Swantje Funk   +4 more
wiley   +1 more source

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

open access: yesApplied Sciences, 2020
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation.
Priya Darshni Kaushik   +5 more
doaj   +1 more source

Home - About - Disclaimer - Privacy