Ion beam engineering of implanted ZnO thin films for solar cell and lighting applications
Chemical Engineering Journal Advances, 2023 Ion beam modification is a one-of-a-kind approach for engineering nanomaterials to change their chemical and physical properties. Ion beam engineering of metal oxide semiconductor nanoparticles has been performed to improve their optoelectronic ...
Vinod Kumar +5 more
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Numerical Analysis of Magnetized Sheath for Inner Surface Modification
IEEE Access, 2019 A fluid model of the magnetized sheath has been built using ion motion equation, ion continuity equation, Poisson's equation, and Boltzmann's relationship of electron for plasma-based low-energy ion implantation (PBLEII) inner surface modification of a ...
Yi Li +3 more
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Properties of polyamide 6 and polyvinylidene fluoride nanofibers irradiated by H+ ions [PDF]
EPJ Web of Conferences, 2022 This work deals with the modification of polymeric nanofibers of polyamide 6 (PA6) and polyvinylidene fluoride (PVDF) which were formed by electrospinning process.
Štěpanovská Eva +4 more
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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Crystals, 2023 Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization.
Alan G. Jacobs +6 more
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Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Advances in Materials Science and Engineering, 2012 Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single
Jeffrey C. McCallum +7 more
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Journal of Biomechanical Science and Engineering, 2018 Poly(lactic acid) (PLA) has attracted much attention as a material for bioabsorbable bone fixation devices, however degradation rate of PLA is very low.
Masato SAKAGUCHI +2 more
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High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
AIP Advances, 2019 This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu +6 more
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Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading
Nuclear Materials and Energy, 2018 Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium.
R. Mateus +7 more
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Resonant Raman Scattering in Boron-Implanted GaN
Micromachines, 2022 A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA).
Yi Peng +7 more
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Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
Journal of Nanotechnology, 2013 We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system.
Jhovani Bornacelli +3 more
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