Results 21 to 30 of about 1,366,968 (297)

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

, 2022
S.276-279The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose
Feili, D., Seidel, H., Maier, R., Völlm, H., Frey, L., Ryssel, H., Häublein, V.   +6 more
core   +1 more source

Properties of polyamide 6 and polyvinylidene fluoride nanofibers irradiated by H+ ions [PDF]

EPJ Web of Conferences, 2022
This work deals with the modification of polymeric nanofibers of polyamide 6 (PA6) and polyvinylidene fluoride (PVDF) which were formed by electrospinning process.
Štěpanovská Eva, Malinský Petr, Matoušek Jindřich, Poustka David, Macková Anna   +4 more
doaj   +1 more source

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Advances in Materials Science and Engineering, 2012
Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single
Jeffrey C. McCallum, David N. Jamieson, Changyi Yang, Andrew D. Alves, Brett C. Johnson, Toby Hopf, Samuel C. Thompson, Jessica A. van Donkelaar   +7 more
doaj   +1 more source

Helium bubble formation in nuclear glass by in-situ TEM ion implantation [PDF]

, 2014
The effect of helium implantation fluences in French nuclear borosilicate glass on He bubble nucleation and growth mechanisms was characterised using in-situ TEM experiments.
Greaves, Graeme, Oliviero, E., Peuget, S, Donnelly, S. E., Hinks, J. A., Peuget, S., Gutierrez, Gabriel Munoz, Gutierrez, G., Gutierrez, G, Jegou, C, Greaves, G., Jegou, C.   +11 more
core   +1 more source

110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression

, 2006
This paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz.
Ashburn, Peter, El Mubarek, H.A.W., Bonar, J.M., Ashburn, P., Fiore, L., Kham, M. N., Petralia, R., El Mubarek, H. A W, Ward, P., Messina, A., Kham, M.N., Alemanni, C., Bonar, J. M.   +12 more
core   +2 more sources

Effect of argon ion-implantation on mechanical and degradation properties of bulk-shaped poly(lactic acid)

Journal of Biomechanical Science and Engineering, 2018
Poly(lactic acid) (PLA) has attracted much attention as a material for bioabsorbable bone fixation devices, however degradation rate of PLA is very low.
Masato SAKAGUCHI, Satoshi KOBAYASHI, Yoshikazu TERANISHI   +2 more
doaj   +1 more source

Ion implantation into nanoparticulate functional layers

, 2009
S.537-540Layers of silicon nanoparticles with resistivity down to 10 mΩcm are demonstrated using chemical and thermal treatment as well as ion implantation. Morphology and crystallinity of the layers are characterized using AFM and XRD.
Jank, M.P.M., Walther, S., Ebbers, A., Ryssel, H.   +3 more
core   +1 more source

Mass Separation Issues for the Implantation of Doubly Charged Aluminum Ions

, 2022
S.291-294A phenomenon in aluminum implantation, where doubly charged Al ions may randomly and unnoticed be replaced by another ion species, is discussed.
Frey, L., Ryssel, H., Bauer, A.J., Häublein, V.   +3 more
core   +1 more source

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

AIP Advances, 2019
This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu, Jianfeng Wang, Hong Gu, Yumin Zhang, Weifan Wang, Rui Xiong, Ke Xu   +6 more
doaj   +1 more source

Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading

Nuclear Materials and Energy, 2018
Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium.
R. Mateus, C. Porosnicu, C.P. Lungu, C. Cruz, Z. Siketić, I. Bogdanović Radović, A. Hakola, E. Alves   +7 more
doaj   +1 more source