Results 21 to 30 of about 154,212 (298)

Effect of argon ion-implantation on mechanical and degradation properties of bulk-shaped poly(lactic acid)

Journal of Biomechanical Science and Engineering, 2018
Poly(lactic acid) (PLA) has attracted much attention as a material for bioabsorbable bone fixation devices, however degradation rate of PLA is very low.
Masato SAKAGUCHI, Satoshi KOBAYASHI, Yoshikazu TERANISHI   +2 more
doaj   +1 more source

Resonant Raman Scattering in Boron-Implanted GaN

Micromachines, 2022
A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA).
Yi Peng, Wenwang Wei, Muhammad Farooq Saleem, Kai Xiao, Yanlian Yang, Yufei Yang, Yukun Wang, Wenhong Sun   +7 more
doaj   +1 more source

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

, 2016
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition.
Bowers, H., Ganesan, K., Johnson, B. C., Liu, R., McCallum, J. C., Prawer, S., van Beveren, L. H. Willems   +6 more
core   +1 more source

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

AIP Advances, 2019
This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu, Jianfeng Wang, Hong Gu, Yumin Zhang, Weifan Wang, Rui Xiong, Ke Xu   +6 more
doaj   +1 more source

Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading

Nuclear Materials and Energy, 2018
Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium.
R. Mateus, C. Porosnicu, C.P. Lungu, C. Cruz, Z. Siketić, I. Bogdanović Radović, A. Hakola, E. Alves   +7 more
doaj   +1 more source

Structural, electrical and catalytic properties of ion-implanted oxides [PDF]

, 1989
The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of ...
Burggraaf, A.J., Hassel, B.A. van
core   +4 more sources

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Journal of Nanotechnology, 2013
We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system.
Jhovani Bornacelli, Jorge Alejandro Reyes Esqueda, Luis Rodríguez Fernández, Alicia Oliver   +3 more
doaj   +1 more source

Elemental Analysis of Coffee with Ion Beam Analytical Techniques

Foods
In this review, we present a compilation of results from studies of coffee carried out with accelerator-based analytical techniques employing swift ions. The fundamentals of these techniques are presented in detail.
Rafaela Debastiani, Leonardo Pessoa da Silva, Gabriela Corati Touguinha, Carla Eliete Iochims dos Santos, Livio Amaral, Johnny Ferraz Dias   +5 more
doaj   +1 more source

Low-energy Se ion implantation in MoS 2 monolayers

npj 2D Materials and Applications, 2022
In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of
Minh N. Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan N. O’Connell, Quentin M. Ramasse, Ursel Bangert, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynal   +18 more
doaj   +1 more source

3-dimensional electrode patterning within a microfluidic channel using metal ion implantation [PDF]

, 2010
The application of electrical fields within a microfluidic channel enables many forms of manipulation necessary for lab-on-a-chip devices. Patterning electrodes inside the microfluidic channel generally requires multi-step optical lithography.
Adleman, James R., Choi, Jae-Woo, Niklaus, Muhamed, Psaltis, Demetri, Rosset, Samuel, Shea, Herbert   +5 more
core   +2 more sources