Results 1 to 10 of about 44,787 (261)

Novel Production Concept of CH₂F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3-D-Stacked CMOS Image Sensors

IEEE Journal of the Electron Devices Society
We have developed a novel molecular-ion implantation technique and a molecular-ion-implanted silicon epitaxial wafer for highly sensitive CMOS image sensors.
Ryo Hirose, Koji Kobayashi, Kazunari Kurita, Takeshi Kadono, Sho Nagatomo   +4 more
doaj   +1 more source

Insight into the nanoscale strengthening mechanism of polycrystalline iron implanted by Cr ions

Materials & Design
The strengthening mechanisms of ion implantation remain a challenge for the application on high-performance precision mechanical manufacturing. Based on the molecular dynamics (MD) method, the paper aims to explore the nanoscale mechanisms of the ...
Tingting Jiang, Jinyuan Tang, Jiuyue Zhao, Yihao Ling, Yelin Zeng   +4 more
doaj   +1 more source

A Study on the Wettability of Ion-Implanted Stainless and Bearing Steels

Metals, 2019
To satisfy the harsh service demand of stainless steel and aviation bearing steel, the anticorrosion and wettability behaviors of 9Cr18 stainless steel and M50 bearing steel tailored by ion beam surface modification technology were experimentally ...
Xinchun Chen, Xuan Yin, Jie Jin
doaj   +1 more source

Grain refinement mechanism of nitrogen ion implantation in 7075-T651 aluminum alloy: Insights from the cellular automaton method

Journal of Materials Research and Technology
Ion implantation can strengthen metal surfaces by inducing grain refinement. However, the refinement mechanism remains unclear, which affects the precise application of the process.
Yelin Zeng, Tingting Jiang, Jinyuan Tang, Jiangping Zhu, Xiaocheng Shen, Yihao Ling   +5 more
doaj   +1 more source

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

MATEC Web of Conferences, 2016
Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using
Atan N., Ahmad Ibrahim, Majlis B.Y., Azle M.F   +3 more
doaj   +1 more source

Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond

Nanotechnology and Precision Engineering
Nitrogen vacancy (NV) color centers in diamond have useful applications in quantum sensing and fluorescent marking. They can be generated experimentally by ion implantation, femtosecond lasers, and chemical vapor deposition.
Wei Zhao, Zongwei Xu, Pengfei Wang, Hanyi Chen   +3 more
doaj   +1 more source

Study on the effect of nitrogen ion implantation process on the bending fatigue strength of carburized and quenched gear

Jixie qiangdu
Aiming at optimizing the gear surface modification process, the influence of ion nitrogen implantation on the bending fatigue strength of carburized and quenched gears was studied.Using low-carbon alloy steel 18CrNiMo7-6 carburized and quenched gears as ...
ZHANG Wei, JIA Huapo, GUAN Rongxin, WANG Xiaopeng, MA Chengtian, XU Yaowei   +5 more
doaj  

EFFECT OF N ION IMPLANTATION ON STRUCTURAL, MORPHOLOGICAL AND MAGNETIC PROPERTIES OF CeO2 THIN FILMS ON Al2O3 SUBSTRATES [PDF]

European Journal of Materials Science and Engineering, 2018
The present study reports the structural, morphological and magnetic properties of 80 keV N ion implanted CeO2 thin films deposited over Al2O3 substrates by RF sputtering technique.
Pawan KUMAR, Zubida HABIB
doaj  

Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

East European Journal of Physics
The composition, electronic structure, emission and optical properties of MgO/Mg films implanted with Ba+ and Na+ ions before and after annealing were studied by using a combination of secondary and photoelectron spectroscopy methods.
M.B. Yusupjonova, D.A. Tashmukhamedova, B.E. Umirzakov, S.S. Pak, Z.R. Saidakhmedova, Sh.K. Salieva   +5 more
doaj   +1 more source

Enhancement of silicon sub-bandgap photodetection by helium-ion implantation. [PDF]

Front Optoelectron, 2023
Wang Z, Wen X, Zou K, Meng Y, Zeng J, Wang J, Hu H, Hu X.   +7 more
europepmc   +1 more source