Impact of Al-ion implantation on the formation of deep defects in n-type 4H-SiC
, 2022 S.66-69In this work, deep defects in an aluminum implanted 4H-SiC n-type epitaxy are discussed in dependence on following influencing factors: concentration of implanted aluminum, implantation energy, implantation at 500°C and at room temperature, as ...
Rüb, Michael +12 more
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Modellierung der Amorphisierung von Silicium durch die Implantation von As, Ge und Si
, 2022 S.251-254New experiments have been performed to measure the two-dimensional amorphous/crystalline (a/c)-interface after implantation of arsenic, germanium, and silicon atoms.
Pichler, P. +5 more
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Effect of carbon ion implantation on the tribology of metal-on-metal bearings for artificial joints [PDF]
, 2017 Metal-on-metal (MoM) bearings have become popular due to a major advantage over metal-on-polymer bearings for total hip arthroplasty in that the larger femoral head and hydrodynamic lubrication of the former reduce the rate of wear.
Yonekura A +20 more
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Ion implantation of polypropylene films for the manufacture of thin film capacitors
, 2022 S.81-84This paper shows that ion implantation into polypropylene films can be used to improve the reliability of thin film capacitors. Hereby, the effect of a significantly reduced water vapor permeability is used.
Djupmyr, M. +4 more
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MOSFET threshold Voltage Shift induced by Ion Implantation performed in different Implanters
, 2022 S.114-117A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect transistors (n-MOSFET) was observed after As-implantation performed with different types of implanters.
Ende, Lutz +2 more
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Ion beam engineering of implanted ZnO thin films for solar cell and lighting applications
Chemical Engineering Journal Advances, 2023 Ion beam modification is a one-of-a-kind approach for engineering nanomaterials to change their chemical and physical properties. Ion beam engineering of metal oxide semiconductor nanoparticles has been performed to improve their optoelectronic ...
Vinod Kumar +5 more
doaj +1 more source
Simulation von BF3-Plasmaionenimplantation: Implantation, Amorphisierung und Diffusion
, 2022 S.237-240In the race for highly doped ultra-shallow junctions (USJs) in complementary metal oxide semi-conductor (CMOS) technologies, plasma immersion ion implantation (PIII) is a promising alternative to traditional beamline implantation.
Cristiano, F. +12 more
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Localized 56Fe+ ion implantation of TiO2 using anodic porous alumina
, 2010 We present result following localized ion implantation of rutile titanium dioxide (TiC2) using anodic porous alumina as a mask. The implantation were performed with 100 keV 56Fe+ ions using a fluence of 1.3-1016 ions/cm2.
Sanz, R. +6 more
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Numerical Analysis of Magnetized Sheath for Inner Surface Modification
IEEE Access, 2019 A fluid model of the magnetized sheath has been built using ion motion equation, ion continuity equation, Poisson's equation, and Boltzmann's relationship of electron for plasma-based low-energy ion implantation (PBLEII) inner surface modification of a ...
Yi Li +3 more
doaj +1 more source
Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Crystals, 2023 Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization.
Alan G. Jacobs +6 more
doaj +1 more source