Ion beam engineering of implanted ZnO thin films for solar cell and lighting applications
Chemical Engineering Journal Advances, 2023 Ion beam modification is a one-of-a-kind approach for engineering nanomaterials to change their chemical and physical properties. Ion beam engineering of metal oxide semiconductor nanoparticles has been performed to improve their optoelectronic ...
Vinod Kumar +5 more
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Differences between thin films deposition systems in the production transition metal nitride [PDF]
, 2013 The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material ...
Arango P.J. +2 more
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Implanted Layer Characterization
Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems), 2016 In modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials.
Adharul Muttaqin, Irman Idris
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Study on the growth and the photosynthetic characteristics of low energy C(+) ion implantation on peanut. [PDF]
PLoS ONE, 2013 Employing the Nonghua 5 peanut as experimental material, the effects of low energy C(+) ion implantation on caulis height, root length, dry weight, photosynthetic characteristics and leaf water use efficiency (WUE) of Peanut Ml Generation were studied ...
Yuguo Han +3 more
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Properties of polyamide 6 and polyvinylidene fluoride nanofibers irradiated by H+ ions [PDF]
EPJ Web of Conferences, 2022 This work deals with the modification of polymeric nanofibers of polyamide 6 (PA6) and polyvinylidene fluoride (PVDF) which were formed by electrospinning process.
Štěpanovská Eva +4 more
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Numerical Analysis of Magnetized Sheath for Inner Surface Modification
IEEE Access, 2019 A fluid model of the magnetized sheath has been built using ion motion equation, ion continuity equation, Poisson's equation, and Boltzmann's relationship of electron for plasma-based low-energy ion implantation (PBLEII) inner surface modification of a ...
Yi Li +3 more
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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Crystals, 2023 Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization.
Alan G. Jacobs +6 more
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Sequential nature of damage annealing and activation in implanted GaAs [PDF]
, 1989 Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first.
Bai, G. +4 more
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Carrier lifetimes in ion-damaged GaAs [PDF]
, 1989 Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1×10^12 cm^−2 the carrier lifetime is inversely proportional to the ion dose.
Johnson, M. B. +2 more
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Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Advances in Materials Science and Engineering, 2012 Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single
Jeffrey C. McCallum +7 more
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