Results 221 to 230 of about 157,776 (313)
Spatially Mapping Neuropeptide Isomers via MALDI Trapped Ion Mobility MS Imaging. [PDF]
Okyem S +3 more
europepmc +1 more source
This work presents a ligand‐pairing strategy that reconstructs lead sulfide quantum dot surfaces for efficient short‐wave infrared optoelectronics. A low‐reactivity thiourea precursor combined with hydrobromic acid enables monodisperse and fully passivated quantum dots.
Dongeon Kim +16 more
wiley +1 more source
Spatial Detection of Microsphere Polystyrene Plastics and Molecular Remodeling within a Full-Body Mouse with MALDI Trapped Ion Mobility Mass Spectrometry Imaging. [PDF]
Vargas KA +5 more
europepmc +1 more source
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Characterization of Ozonation Transformation Products of Flutamide and Azathioprine by UHPLC-Ion Mobility-High-Resolution Mass Spectrometry. [PDF]
García-Martínez J +6 more
europepmc +1 more source
Mohamed Helmy, Frank Gunzer
openaire +1 more source
Acid Site Design for Low Hydration Proton Exchange Membranes
α‐CF2 substitution adjacent to sulfonic acid increases acid strength and enables efficient proton transport under low hydration conditions. This molecular design reduces the dependence of hydrocarbon proton exchange membranes on excessive water uptake, addressing a key limitation of conventional hydrocarbon PEMs while maintaining favorable conductivity
Ajay Kumar +10 more
wiley +1 more source
Determining the Ion Mobility in Perovskite Solar Cells from Impedance Spectroscopy. [PDF]
Elhorst FD +3 more
europepmc +1 more source
Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu +7 more
wiley +1 more source

