Results 71 to 80 of about 131 (110)
, 2016 Some of the next articles are maybe not open access.
Related searches:
Related searches:
Electronic spectroscopy and electronic structure of diatomic IrSi
The Journal of Chemical Physics, 2013The optical spectrum of diatomic IrSi has been investigated for the first time, with transitions observed in the range from 17 178 to 23 858 cm−1 (582–419 nm). A rich spectrum has been recorded, consisting of 14 electronic band systems and a number of unclassified bands.
Maria A, Garcia +4 more
openaire +2 more sources
IrSi Schottky barrier diodes for infrared detection
1982 International Electron Devices Meeting, 1982Infrared detectors using Schottky Barriers of near noble metal silicides have shown rapid improvements in the past five years. The sensing mechanism of these detector elements is internal photoemission over the energy barrier formed between the metal silicide and the silicon substrate. By lowering the barrier potential the Schottky photoresponse can be
P.W. Pellegrini +3 more
openaire +1 more source
IrSi Schottky-barrier infrared image sensor
1987 International Electron Devices Meeting, 1987An iridium silicide Schottky-barrier (IrSi SB) infrared image sensor with 512×512 pixels has been developed. The Charge Sweep Device architecture is applied to the device. The detector is an IrSi/p-Si SB diode, which has a cutoff wavelength of 7.3µm. The device is cooled to 62K for reducing thermally generated dark current.
N. Yutani +4 more
openaire +1 more source
The MAII project: preparation to the IRSI/Darwin mission
EAS Publications Series, 2003In the frame of ESA's DARWIN mission technological studies, Alcatel Space, supported by ESA, is designing and manufacturing a nulling interferometer whose aim is to demonstrate in laboratory the extinction of a point source with a stable nulling ratio of 10 -6 . This breadboard is presented with emphasis on the integrated optics beam combiner.
V. Weber +7 more
openaire +1 more source
Crystallographic Structure of Mesotaxial IrSi3 in Six
MRS Proceedings, 1993ABSTRACTA buried epitaxial IrSi3 layer has been produced in (111) oriented Si by high dose Ir+- implantation (1 MeV, 1.7× 1017 Ir+/cm2, 550°C) and subsequent annealing (5 h at 1100°C). Transmission electron microscopy and ion channeling show that the hexagonal IrSi3 prefers to form with its (2110) plane oriented parallel to Si(111).
H.-J. Hinneberg +2 more
openaire +2 more sources
Amorphous and crystalline IrSi Schottky barriers on silicon
Applied Physics A: Materials Science & Processing, 1998The electro-optical properties of the films are studied by measuring the infrared optical absorption and the yield of hole photoemission across the Schottky barrier to the p-Si substrate. The Schottky barrier height of the amorphous a-IrSi to the valence band of Si is 0.17–0.18 eV.
Wörle, D. +6 more
openaire +2 more sources
Investigation of the microstructure of IrSi X thin films
Fresenius' Journal of Analytical Chemistry, 1998The microstructure of sputtered IrSiX thin films was studied as a function of initial chemical composition and of annealing treatment. The films were investigated ex-situ by optical microscopy (OM) and transmission electron microscopy (TEM). Using OM characteristical differences of brightness in the polarization contrast were used to quantify the phase
R. Kurt +5 more
openaire +1 more source
The Electronic Characteristics of IrSi Thin Films
Materials Science Forum, 2005The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and I-V data. These SBHs decrease with increasing measurement temperature.
openaire +1 more source