Results 201 to 210 of about 11,137 (263)

Nucleation in Amorphous Terfenadine at a Temperature Much Lower than the Glass Transition Temperature and Its Impact on Physical Stability. [PDF]

Mol Pharm
Yamaguchi K, Ishizuka Y, Yoshikawa E, Makishima T, Mizoguchi R, Kawakami K.   +5 more
europepmc   +1 more source

Ultra-Fast Isothermal Formation of DNA Nanostructures in Culture Media: Application to In Situ Assembly of DNA Origami With Living Cells. [PDF]

Small
Bourdon L, Wilkens GD, Dehissi S, Hotte S, Rudiuk S, Morel M, Yamada A, Bellot G, Baigl D.   +8 more
europepmc   +1 more source

Numerical and Experimental Study on the Molten Pool Behavior and Magnetic Properties of Nano-Crystalline Alloy Ribbon Prepared by PlanarFlow Casting. [PDF]

Materials (Basel)
Li L, Ji H, Sun J, Li D, Li B, Yao J.
europepmc   +1 more source

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The isothermic annealing of bainite

Canadian Metallurgical Quarterly, 1975
AbstractBainitic high carbon steel has been isothermally annealed in the temperature range, 823–973K, in order to follow changes in structure and mechanical properties. The kinetic data for carbide coarsening were found to be in substantial agreement with the Ostwald ripening theory at the higher annealing temperatures. The observed divergence from the
G. Deep, W.M. Williams
openaire   +1 more source

Isothermal annealing of arsenic-implanted silicon

Journal of Physics C: Solid State Physics, 1974
Isothermal annealing studies of arsenic-implanted silicon have been made at temperatures above 550 degrees C for a dose below the amorphization limit. The process appears to follow first-order reaction kinetics with an activation energy of about 1 eV in the temperature range 550-850 degrees C.
F Cappellani, G Restelli, L Spinoni
openaire   +1 more source

The isothermal annealing of boron implanted silicon

Radiation Effects, 1971
Abstract Isothermal annealing studies of boron implanted silicon have been made at temperatures above 600°C for boron doses in the range of 1014 to 1015 ions/cm2. A 5 eV activation energy is obtained in the temperature range 600°C to 900°C. This value is the same as that associated with the generation and subsequent migration of vacancies in silicon ...
T. E. Seidel, A. U. Mac Rae
openaire   +1 more source

Isothermal Annealing of Boron Implanted Silicon

Physica Scripta, 1974
The sheet resistivity has been measured in isothermal annealing studies of 10 kohm cm silicon implanted with 40 keV boron ions. The doses used were 2 x 1012 and 2 x 1014 ions/cm2. The annealing was performed in the temperature range 300 to 800°C and the maximum annealing time used was 4 hours at each temperature.
null S Peterström, null G Holmén
openaire   +1 more source

The rapid isothermal annealing of tantalum silicide

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
Abstract Silicon-poor tantalum silicide films cosputtered on polycrystalline silicon over thermal oxide on silicon were rapidly annealed for various temperatures and times using a graphite strip heater. Rutherford backscattering and X-ray diffraction showed rapid formation of a stoichiometric tantalum disilicide via Si diffusion from the ...
K. Daneshvar, R.E. Jones
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Isothermal and non-isothermal crystallization of PP: effect of annealing and of the addition of HDPE

Polymer, 1998
Abstract In this report, we present the results of our investigation into the crystallization behaviour of polyproplene. The crystallization process was followed by hot-stage optical microscopy, differential scanning calorimetry, and dynamic mechanical methods. As well, nuclear magnetic resonance spin-spin relaxation techniques were employed to probe
H.P. Blom, J.W. Teh, T. Bremner, A. Rudin   +3 more
openaire   +1 more source