Results 261 to 270 of about 708,621 (325)

Vacancy annealing kinetics during non-isothermal ageing

Philosophical Magazine, 1970
Abstract We showed in a recent analytical and numerical study that the formation of divacancies during constant-heating-rate annealing (following a down-quench) should lead to an observable minimum in the electrical resistance. The minimum is related to the divacancy binding energy and should permit it to be directly measured.
A. J. Perry, F. A. Hofelich
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DSC Behaviour of Isothermally Annealed Fibres

1980
The DSC behaviour of both polyamide and polyester fibres after an isothermal annealing process was investigated in our previous papers(1),(2). Some thermal process was to be observed in the temperature region between Tg and Tm. The position of this thermal process is related to the annealing temperature.
J. Vaníček, M. Berka
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Isothermal annealing of saw chains

Metal Science and Heat Treatment, 1966
1. Isothermal annealing of 85KhF (85Kh) and ShKh15 steels to a hardness of HRC 48-55 increases the toughness almost twice (by comparison with quenching and tempering to the same hardness). 2. With isothermal annealing the hardness of 85KhF and ShKh15 steels (links of saw chains, for example) can be increased by 5–6 HRC units without ...
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Isothermal Anneal Effect on Leucite Content in Dental Porcelains

Journal of Dental Research, 1995
Porcelain thermal expansion behavior is a function of leucite content, and leucite changes can produce porcelain-metal incompatibilities. The purpose of the present study was to determine whether isothermal anneal treatments (such as are encountered during "post-soldering" operations) could result in alterations of leucite content of dental porcelain.
J R, Mackert, S W, Twiggs, A L, Evans-Williams   +2 more
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An EBSP study of isothermally‐annealed cold‐rolled nickel

Microscopy Research and Technique, 2004
AbstractScanning electron microscopy and electron backscattered patterns, EBSP, have been employed to reveal both the grain structure and texture of 90% cold‐rolled polycrystalline nickel after 1‐hour anneals at a variety of temperatures. After annealing at either 400° or 500°C, small, cube‐oriented, equi‐axed grains were produced via primary ...
I, Baker, J, Li
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Isothermal Annealing Effects in Irradiated Copper

Physical Review, 1953
Copper wires were bombarded with 12-Mev deuterons at low temperatures. The wires were then allowed to anneal isothermally at successive temperatures from -185\ifmmode^\circ\else\textdegree\fi{}C to +167\ifmmode^\circ\else\textdegree\fi{}C. Recovery of the electrical resistivity increase, produced by the bombardment, was observed at all temperatures ...
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Isothermal Magnetic-Annealing Experiments on Substitutional Alloys

Journal of Applied Physics, 1967
Isothermal magnetic-annealing experiments were carried out by means of torque measurements on a Ni(Fe) alloy containing 16% Fe and on Fe(Si) alloys with concentrations between 2.7 and 7.9 at. %Si. The measured torques showed an approximate exponential time-dependence in approaching equilibrium.
O. S. Lutes, R. P. Ulmer
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Short-term isothermal annealing of polyethylene single crystals

Journal of Applied Physics, 1985
Polyethylene single-crystal mats 20 μm thick were heated to the annealing temperatures (120–132 °C) in less than 1 s. The Cornell High Energy Synchrotron Source (CHESS) and a TV detector system were used to obtain wide- and small-angle x-ray scattering patterns from these mats during annealing with a time resolution of 0.3 s.
David T. Grubb, J. Jui-Hsiang Liu
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• Evolution of aluminum grain boundaries during isothermal annealing

Deformation and Fracture of Materials, 2023
Using an example of textured aluminum foils, the possibilities of using the reflected electron diffraction method for in situ studies of the behavior of grain boundaries during isothermal annealing have been experimentally demonstrated. It is shown that there is no homogeneity of the microstructure in space and no continuity of its change in time ...
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Electronic Defects in Silicon after Transient Isothermal Annealing

MRS Proceedings, 1983
ABSTRACTWe have investigated trap levels in silicon after Thermal Pulse Annealing (TPA). Three different annealing systems consisting of tungsten lamps or a graphite heater have been applied. Trap levels induced in different silicon materials (Cz, FZ, Epi) after TPA have been studied by DLTS and admittance spectroscopy. In boron-doped epitaxial silicon
G. Pensl, M. Schulz, P. Stolz, N.M. Johnson, J.F. Gibbons, J. Hoyt   +5 more
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