Re: Park et al. "Association between job insecurity and cardiovascular disease among workers with type 2 diabetes mellitus". [PDF]
Scand J Work Environ HealthSuarez JSP.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
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Establishing Optimal L1 Pelvic Angle Targets to Minimize Both Proximal Junctional Kyphosis and Pelvic Nonresponse in Adult Spinal Deformity Surgery. [PDF]
NeurospinePark SJ +4 more
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Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene
Advanced Electronic Materials, EarlyView.The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang +13 more
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Elucidating the Mechanism of Jisheng Shenqi Pills in the Treatment of Diabetic Kidney Disease: Network Pharmacology Combined with Experimental Verification. [PDF]
Endocr Metab Immune Disord Drug TargetsMa X, Zhou G.
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Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping
Advanced Electronic Materials, EarlyView.EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe +11 more
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Impact Resistance of Layered Aramid Fabric: A Numerical Study on Projectile-Induced Damage. [PDF]
Polymers (Basel)Titire L, Muntenita C, Chivu M.
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Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Advanced Electronic Materials, EarlyView.Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
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Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations
Advanced Electronic Materials, EarlyView.This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka +5 more
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