Results 151 to 160 of about 2,097,832 (235)

Emergence of Unconventional Magnetic Order in Strain‐Engineered RuO2/TiO2 Superlattices

open access: yesAdvanced Science, EarlyView.
Epitaxial strain activates unconventional magnetism in rutile RuO2, absent in bulk or relaxed RuO2. Polarized neutron reflectometry with atomic‐layer resolution directly reveals finite magnetization confined to RuO2 layers in fully strained RuO2/TiO2 superlattices on TiO2 (110).
Seung Gyo Jeong   +12 more
wiley   +1 more source

Spin Splitting Coupled Visible‐Light Driven Injection Photocurrent in Bilayer Altermagnets

open access: yesAdvanced Science, EarlyView.
Interlayer engineering in bilayer altermagnets continuously tunes visible‐light injection photocurrents, accompanied by controllable altermagnetic spin splitting. Enhanced interlayer hybridization reconstructs the band and quantum geometries, leading to opposite evolution of the normal and magnetic injection currents and establishing a direct ...
Huanhuan Yang   +3 more
wiley   +1 more source

Bio‐Inspired Internal Stress Engineering for Microscale Surface Cracking in Sensitive Strain Sensors

open access: yesAdvanced Science, EarlyView.
This study presents a bio‐inspired internal stress engineering strategy to fabricate highly sensitive crack‐based strain sensors. By harnessing the internal expansion energy of microspheres and the thickness‐dependent brittle‐to‐ductile transition of ultrathin gold films, tunable microscale cracks are generated.
Jae Yeong Jang, Hanchul Cho, Young Jung
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen   +8 more
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

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