Spatial mapping of chiral-induced spin selectivity in chiral perovskite via spin-Schottky junction. [PDF]
Li M +14 more
europepmc +1 more source
Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se)2 Thin‐Film Solar Cells
Wide‐gap Cu (In,Ga)(S,Se)2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. Different sources of open circuit voltage limitations were discussed and weighted. Interface recombination appears the main recombination channel, which however can be influenced heavy alkali treatment ...
Setareh Zahedi‐Azad +25 more
wiley +1 more source
Multimodal characterization of Te inclusions in Cd<sub>1-x</sub>Zn<sub>x</sub>Te and Cd<sub>1-x</sub>Zn<sub>x</sub>Te<sub>1-y</sub>Se<sub>y</sub> for gamma and X-ray detectors. [PDF]
Robles RC +10 more
europepmc +1 more source
ABSTRACT Organic‐inorganic metal halide perovskite solar cells (PSCs) are promising for photovoltaics due to their excellent optoelectronic properties. However, achieving high efficiency and stability remains challenging, mainly due to defects and energy losses at the electron transport layer (ETL)/perovskite interface.
Jiahui Jin +8 more
wiley +1 more source
Nanoscale Analysis of Sulfur Poisoning Effects on Hydrogen Sorption in Single Pd Nanoparticles. [PDF]
Kostan-Carmiel M +5 more
europepmc +1 more source
Self-Powered High-Performance WS<sub>2</sub> Photodetector via a Monolithic p-i-n Homojunction. [PDF]
Park J, You Y, Lee D, Kim J.
europepmc +1 more source
Enhancing the Chemical Reactivity of Graphene through Substrate Engineering
This review highlights methods to enhance the reactivity of graphene through substrate engineering, focusing on strain and charge doping. Strains induced by nanoparticles, metal crystal orientations, or stretchable polymers increase the reactivity of graphene.
Jia Tu, Mingdi Yan
wiley +1 more source
Synergistic enhancement in Ag quantum dot modified TiO<sub>2</sub> via interfacial electron transfer channels and LSPR. [PDF]
Du Y +8 more
europepmc +1 more source
160 GHz Schottky Diodes from Solution‐Processed IGZO
A simple, scalable method for contact engineering of planar asymmetric nanogap electrodes enables the development of Schottky diodes with a cut‐off frequency of 160 GHz. Applying these diodes to radio‐frequency rectifying circuits yields output voltages in the range of 0.3–0.74 volts.
Lazaros Panagiotidis +17 more
wiley +1 more source

