Results 41 to 50 of about 1,418,339 (359)
Rod Laser – The first laser was a rod laser [PDF]
Laser Technik Journal, 2005 Laser technology is relatively young. The first laser was built in 1960 by Maiman at AT&T Labs in the USA. It was a rod-shaped ruby laser, this arrangement having been chosen for its favourable symmetry (Fig. 1). Starting from this device, the technology of solid-state lasers developed rapidly.
Hans Amler, Josef Thumbs
openaire +2 more sources
Mode stabilized terrace InGaAsP lasers on semi-insulating InP [PDF]
, 1982 Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion.
Chen, T. R. +5 more
core +1 more source
The piston Riemann problem in a photon superfluid
Nature Communications, 2022 The flow of light in nonlinear media can be considered as superfluid flow and described with quantum hydrodynamics. Here the authors demonstrate superfluid flow, optical rarefaction (retracting piston) and shock (pushing piston) wave pairs and ...
Abdelkrim Bendahmane +5 more
doaj +1 more source
Multi-stabilities and symmetry-broken one-colour and two-colour states in closely coupled single-mode lasers [PDF]
, 2014 We theoretically investigate the dynamics of two mutually coupled identical single-mode semi-conductor lasers. For small separation and large coupling between the lasers, symmetry-broken one-colour states are shown to be stable.
Amann, Andreas +2 more
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A theory of longitudinal modes in semiconductor lasers [PDF]
, 1982 A theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities.
Lau, Kam Y., Yariv, Amnon
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Very low threshold InGaAsP mesa laser [PDF]
, 1983 Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple
Chen, T. R. +6 more
core +1 more source
Auger recombination in quantum-well InGaAsP heterostructure lasers [PDF]
, 1982 Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers.
Chiu, L. C., Yariv, Amnon
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Overview of the EU FP7-project HISTORIC [PDF]
, 2010 HISTORIC aims to develop and test complex photonic integrated circuits containing a relatively large number of digital photonic elements for use in e.g. all-optical packet switching.
Chrysos, Nikolaos +10 more
core +6 more sources
INVESTIGATIONS OF THIN TITANIUM OXIDE FILMS GROWN BY REACTIVE PULSED LASER DEPOSITION [PDF]
Romanian Journal of Oral Rehabilitation, 2018 Titanium oxide thin films were deposited on Si monocrystalline substrate using the pulsed laser ablation technique in a reactive oxygen atmosphere. The films were obtained starting from Ti and TiO2 targets which were ablated using a KrF* excimer laser (
Gabriela Dorcioman +7 more
doaj
Solar driven lasers for power satellite applications [PDF]
, 1980 The technological feasibility of using multimagawatt lasers for space power transmission is discussed. Candidate lasers include electric discharge lasers, direct optically pumped lasers, and free electron ...
Cassady, P., Klosterman, E., Taussio, R.
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