Results 131 to 140 of about 25,501 (266)
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source
Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han +4 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
The densification process of Li6PS5Cl powders with varying particles size distributions reveals differences in smaller and larger distributions. Higher strain is revealed for the smaller particle size distribution from X‐ray diffraction. Discrete element method simulations uncover that the reason for the higher strain is not the particle size itself ...
Vasiliki Faka +14 more
wiley +1 more source
Stage‐Specific Roles of Deep Eutectic Solvents in Recycling of Spent Lithium‐Ion Batteries
Deep eutectic solvents (DESs) offer tunable acidity, redox, and coordination properties for selective recycling of spent lithium‐ion battery cathodes. Through co‐dissolution, single‐ and two‐metal separations, DESs enable sustainable recovery of critical metals for closed‐loop regeneration of battery‐grade materials, advancing a circular economy for ...
Jingxiu Wang +4 more
wiley +1 more source
Designing Memristive Materials for Artificial Dynamic Intelligence
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Deep Learning‐Assisted Design of Mechanical Metamaterials
This review examines the role of data‐driven deep learning methodologies in advancing mechanical metamaterial design, focusing on the specific methodologies, applications, challenges, and outlooks of this field. Mechanical metamaterials (MMs), characterized by their extraordinary mechanical behaviors derived from architected microstructures, have ...
Zisheng Zong +5 more
wiley +1 more source
Manipulating Individual Topological Solitons and Bisolitons in an Electronic System. [PDF]
Im T, Park JW, Yeom HW.
europepmc +1 more source
Decision making and soft computing: proceedings of the 11th international FLINS conference [PDF]
Dos Santos Machado, Liliane +3 more
core +1 more source

