Results 161 to 170 of about 1,334 (305)

Emergent Topological Magnons and Thermal Hall Effect in 2D Filling‐Enforced Fully Compensated Ferrimagnets

open access: yesAdvanced Functional Materials, EarlyView.
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai   +8 more
wiley   +1 more source

Integrable light-cone lattice discretizations from the universal R-matrix

open access: yes, 2015
Our goal is to develop a more general scheme for constructing integrable lattice regularisations of integrable quantum field theories. Considering the affine Toda theories as examples, we show how to construct such lattice regularisations using the ...
Meneghelli, Carlo   +4 more
core  

Superdiffusion in one-dimensional quantum lattice models

open access: yes, 2018
We identify a class of one-dimensional spin and fermionic lattice models which display diverging spin and charge diffusion constants, including several paradigmatic models of exactly solvable strongly correlated many-body dynamics such as the isotropic ...
De Nardis, Jacopo   +3 more
core   +1 more source

Speckle‐Engineered Upconversion Amplification in Nanoemulsion‐Templated Hydrogel Microdomes

open access: yesAdvanced Functional Materials, EarlyView.
Nanoemulsion‐confined PEGDA microdomes generate speckle‐like excitation fields that strongly amplify upconversion luminescence upon dehydration, enabling filter‐free visible readout with reversible on–off switching. DMD‐based lithography yields scalable, shape‐programmable arrays for moisture‐responsive displays and optical encryption.
Chaeyeong Ryu   +13 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Integrable Lattice Equations

open access: yes
Integrable Lattice Equations. When mathematical models are simulated on a computer, the result is a system of partial difference equations, whose solutions evolve with discrete steps on a lattice in space and time. While many tools have been developed to

core  

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon   +7 more
wiley   +1 more source

Integrable chain models with staggered R-matrices

open access: yes, 2001
12 pages, 2 figures, contribution to the proceedings of Advanced NATO Workshop on Statistical Field Theories, Como, June 18-23, 2001The technique of construction on Manhattan lattice (ML) the fermionic action for Integrable models is presented.
Sedrakyan, A.
core  

The Field Theory Limit of Integrable Lattice Models

open access: yes, 1994
21 pages, Latex, LPTHE preprint 94-26.
openaire   +2 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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