Results 191 to 200 of about 8,030 (311)

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

open access: yesAdvanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante   +17 more
wiley   +1 more source

From Mechanics to Electronics: Influence of ALD Interlayers on the Multiaxial Electro‐Mechanical Behavior of Metal–Oxide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff   +9 more
wiley   +1 more source

Bound states of Schrödinger-type operators on one and two dimensional lattices

open access: hybrid, 2021
Shokhrukh Yu. Kholmatov   +2 more
openalex   +1 more source

Copper‐Based Crystalline‐Metallic Glass Composite Thin Films: A Novel Material with Enhanced Strength and Thermally Stable Nanotwins

open access: yesAdvanced Functional Materials, EarlyView.
A Cu‐based crystal‐glass composite with high‐density twins is identified by a fast screening technique using combinatorial sputtering together with XRD and nanoindentation mapping. This bamboo‐like structure demonstrates homogenous plastic flow and retains high strength during in situ high temperature tests, up to 1 GPa at 550°C, owing to those ...
Chunhua Tian   +10 more
wiley   +1 more source

Lattices of closure operators

open access: yesLattices of closure operators
The system of all the closure operators on a set V forms a lattice [3]. This lattice is isomorphic to the lattice of all the topped intersection structures on V. This paper discribes basic properties of these lattices, and gives a method of listing up all the members of these lattices.
openaire  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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