Results 21 to 30 of about 69 (69)

Electron-electron scattering in silicon inversion layers

Journal of Physics C: Solid State Physics, 1983
The authors present the results of an investigation of the rate of electron-electron scattering in the two-dimensional electron gas of the Si inversion layer. The electron-electron scattering rate was extracted by analysis of the negative magnetoresistance in the regime of weak localisation when kFl>1, where kF is the Fermi wavevector and l is the mean
R A Davies, Michael Pepper
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Electron states in disordered layers [PDF]

Journal of Physics C: Solid State Physics, 1988
The authors discuss the application of the first-principles Korringa-Kohn-Rostoker coherent potential approximation to the calculation of the electronic structure of substitutionally disordered alloys with layer geometries (surfaces, interfaces etc)-the LKKRCPA.
J H Kaiser, R J Blake, P J Durham
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Stability of laminar electron layers

The Physics of Fluids, 1984
The stability of a finite thickness, laminar cylindrical shell of electrons rotating azimuthally and enclosed in a coaxial waveguide is considered. The equilibrium rotation of the electrons is supported either by a radial electric field, an axial magnetic field, or a combination of both.
Y. Y. Lau, D. Chernin
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Shielding by an electron surface layer

Physical Review B, 1978
We seek to determine whether the shielding observed in the electron free-fall experiment could be performed by electrons in a surface layer. An idealized model is used to estimate the shielding of the uniform electric field produced by the gravitational compression of the ionic lattice. We allow for the possibility that the charges in the surface layer
John M. J. Madey, Richard Squier Hanni
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Correlations in the Layered Electron Gas

physica status solidi (b), 1998
The self-consistent theory of Singwi, Tosi, Land and Sjolander (STLS), which accounts for exchange and short-range correlation effects through an effective potential depending on the structure factor, is generalized to the Visscher and Falicov model of the layered electron gas.
U. de Freitas, Nelson Studart, W. B. da Costa   +2 more
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Hot electrons in layered semiconductors

Physics Today, 1980
As electronic systems—and especially computers—are used more and more widely in almost all areas of endeavor and daily life, the semiconductor technology on which they are based is being pushed to ever larger-scale integration and ever greater miniaturization.
Nick Holonyak, Karl Hess
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Electron focusing in layered conductors

Physica B: Condensed Matter, 1996
Abstract The electron focusing effect in layered metals is investigated theoretically. The singularities of the dependence of the signal at the measuring contact on the magnetic field, which do not occur in isotropic conductors, are predicted.
Yu. A. Kolesnichenko, Tesgera Bedassa
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Electron locking in layered structures

Physica B: Condensed Matter, 2000
Abstract We describe a novel state of electrons and phonons arising in layered structures, like cuprates (HTSC) and semiconductor superlattices (SSL) due to electron–phonon interactions (which can be strongly enhanced by a strong magnetic field). These states are characterized by a localization of phonons and a self-trapping [1] , [2] , [3] , [4] ,
H. S. Dhillon, Feodor Kusmartsev
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Electronic structure of layered compounds

JETP Letters, 2006
The electronic structure of the intercalated graphite compounds XC6 (X = Ca, Sr, Ba, Yb, and La) has been studied using the linearized augmented plane-wave method. It has been found that the electronic structure of the carbon layers in these compounds is qualitatively different from a two-dimensional graphite structure. A lower critical superconducting-
A. S. Korshunov, Yu. B. Kudasov
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Electron scattering by a crystal layer

Theoretical and Mathematical Physics, 2013
We consider the one-particle discrete Schrodinger operator H with a periodic potential perturbed by a function ɛW that is periodic in two variables and exponentially decreasing in the third variable. Here, ɛ is a small parameter. We study the scattering problem for H near the point of extremum with respect to the third quasimomentum coordinate for a ...
T.S. Tinyukova, Yu. P. Chuburin
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