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A leakage current replica keeper for dynamic circuits
2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006We present a leakage current replica (LCR) keeper for dynamic domino gates that uses an analog current mirror to replicate the leakage current of a dynamic gate pull-down stack and thus tracks process, voltage, and temperature. The proposed keeper has an overhead of one field-effect transistor per gate plus a portion of a shared current mirror ...
Yolin Lih +2 more
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2017
Leakage current can be defined as the current flowing through the ground in a lot of systems. The magnitude of the leakage current is defined based on the application and its topology. In particular, applications with transformerless topologies can be attacked by leakage current.
Kyo-Beum Lee, June-Seok Lee
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Leakage current can be defined as the current flowing through the ground in a lot of systems. The magnitude of the leakage current is defined based on the application and its topology. In particular, applications with transformerless topologies can be attacked by leakage current.
Kyo-Beum Lee, June-Seok Lee
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Proceeding of the thirteenth international symposium on Low power electronics and design - ISLPED '08, 2008
Summary form only given. In only 5 years, leakage developed from an academic corner phenomenon to a central problem of embedded system design. In sub 90 nm designs the leakage power is already exceeding the dynamic power. The intention of this tutorial is to first review the mechanisms causing leakage and the parameters and imperfections causing ...
Wolfgang Nebel, Domenik Helms
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Summary form only given. In only 5 years, leakage developed from an academic corner phenomenon to a central problem of embedded system design. In sub 90 nm designs the leakage power is already exceeding the dynamic power. The intention of this tutorial is to first review the mechanisms causing leakage and the parameters and imperfections causing ...
Wolfgang Nebel, Domenik Helms
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Statistical leakage analysis using the deterministic modeling of cell leakage current
2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012), 2012This paper presents a new approach to estimate the n-sigma chip leakage current in the chip leakage probability density function of statistical leakage analysis (SLA) through gate-level deterministic leakage analysis (DLA). Although SLA provides accurate result than corner-based analysis, it is an impractical solution in recent technology comprising ...
Jae Hoon Kim, Young Hwan Kim
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2002
We will present a method for the evaluation of the charge distribution and quantum-mechanical leakage currents in ultra-thin metal-insulator-semiconductor (MIS) gate stacks that may be composed of several layers of materials. Also the charge distribution due to the finite penetration depth inside the insulating material stack is obtained.
Wim Magnus, Wim Schoenmaker
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We will present a method for the evaluation of the charge distribution and quantum-mechanical leakage currents in ultra-thin metal-insulator-semiconductor (MIS) gate stacks that may be composed of several layers of materials. Also the charge distribution due to the finite penetration depth inside the insulating material stack is obtained.
Wim Magnus, Wim Schoenmaker
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Leakage current characteristics of XLPE
Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1981, 1981Because the leakage current in XLPE changes in proportion to the quantity of the crosslinking agent by-products, leakage current might be controlled by the amount of ion conduction carriers which are supplied with the by-products. And because the leakage current in impregnated PE sheets changes in proportion to the conductivity of each by-product in ...
T. Hayami, S. Yarnanouchi, K. Yatsuka
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Leakage currents in SOI MOSFETs
IEEE Transactions on Nuclear Science, 1988Total-dose response of both NMOS and PMOS FETs fabricated on SOI substrates was studied. Two types of back-channel leakage currents were identified. A back-channel leakage due to MOSFET action uses the substrate bias as the gate bias. The other component is due to soft reverse characteristics of the body-drain junction.
N.K. Annamalai, M.C. Biwer
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An exploration of leakage current
40th Conference Proceedings on Electronic Components and Technology, 2002A simple programmable sequence of measurements which allows classification of leakage currents of capacitors based on their time, temperature, and voltage characteristics has been devised. The method adopts the concept that the measured current is the sum of independent flow mechanisms, one of which is present to a consistent extent in all the ...
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1965
The current in the blocking direction in a diode is called the leakage current. There are no leakage currents in the transistor with its two diodes if one electrode is open at a time. The amounts of these leakage currents depend only a little upon the value of the voltage applied (saturation).
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The current in the blocking direction in a diode is called the leakage current. There are no leakage currents in the transistor with its two diodes if one electrode is open at a time. The amounts of these leakage currents depend only a little upon the value of the voltage applied (saturation).
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Statistical Leakage Estimation Based on Sequential Addition of Cell Leakage Currents
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2010This paper presents a novel method for full-chip statistical leakage estimation that considers the impact of process variation. The proposed method considers the correlations among leakage currents in a chip and the state dependence of the leakage current of a cell for an accurate analysis.
Wook Kim, Kyung Tae Do, Kim, YH
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