Results 161 to 170 of about 628,151 (302)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. [PDF]

open access: yesMicromachines (Basel), 2022
Gao X   +8 more
europepmc   +1 more source

Polymer Network Modified Perovskite for High‐Performance Pure Blue Light‐Emitting Diodes

open access: yesAdvanced Functional Materials, EarlyView.
A polymer network of poly(4‐vinylphenol) (PVPh) is introduced to improve pure blue perovskite light‐emitting diodes. PVPh effectively passivates defects, enhances film morphology, reduces lattice strain, and suppresses ion migration. These effects lead to record device performance, achieving 9.82% external quantum efficiency and stable blue emission at
Zhongkai Yu   +11 more
wiley   +1 more source

Polymeric Insulator Conditions Estimation by Using Leakage Current Characteristics Based on Simulation and Experimental Investigation. [PDF]

open access: yesPolymers (Basel), 2022
Salem AA   +6 more
europepmc   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun   +8 more
wiley   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li   +5 more
wiley   +1 more source

Status of 30-centimeter-diameter mercury ion thruster isolator development [PDF]

open access: yes
Results are presented of several 30 cm diameter mercury ion thruster isolator life tests that show that the onset and exponential increase of leakage current problems observed in earlier thruster operations and isolator tests have been solved.
Mantenieks, M. A.
core   +1 more source

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