Results 141 to 150 of about 7,517,528 (295)

Confinement‐Engineered Thermally Programmed Ion‐Gating Separator for Decoupling Thermal–Electrochemical Feedback in High‐Energy Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A new phase‐change material encapsulated membrane offers more thermal resilience stability and safety than the conventional separators for batteries. ABSTRACT Thermal runaway in lithium‐ion batteries arises from the intrinsic coupling between heat generation and ion transport, yet conventional shutdown separators primarily rely on passive pore collapse
Sumedha Rajpoot   +17 more
wiley   +1 more source

Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results

open access: yes, 2010
We introduce experimental results that reveal a small static and a slowly varying-dynamic magnetic field B induces a magneto-modulation of the gate leakage current of a 65 nm nMOSFET.
PEDRO JAVIER GARCIA RAMIREZ   +2 more
core  

Engineering Local Polar Frustration in Lead‐Free Dielectric Ceramics for Ultrahigh Normalized Energy Storage Performance

open access: yesAdvanced Functional Materials, EarlyView.
Local polar frustration is engineered to stabilize an ergodic relaxer through nanoscale multiphase coexistence, suppressing long‐range ferroelectric order while preserving high polarization. This strategy delivers ultrahigh low‐field normalized energy density (Wa >0.020 mC cm−2), exceptional thermal stability, and a transferable design principle for ...
Hareem Zubairi   +9 more
wiley   +1 more source

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. [PDF]

open access: yesMicromachines (Basel), 2022
Gao X   +8 more
europepmc   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

open access: yesAdvanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung   +17 more
wiley   +1 more source

Polymeric Insulator Conditions Estimation by Using Leakage Current Characteristics Based on Simulation and Experimental Investigation. [PDF]

open access: yesPolymers (Basel), 2022
Salem AA   +6 more
europepmc   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

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