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Leakage current starved domino logic
Proceedings of the 16th ACM Great Lakes symposium on VLSI, 2006A new circuit technique based on a single PMOS sleep transistor and a dual threshold voltage CMOS technology is proposed in this paper for simultaneously reducing subthreshold and gate oxide leakage currents in idle domino logic circuits. In the sleep mode, the output inverter and keeper transistor of a domino gate are disconnected from the power ...
Zhiyu Liu, Volkan Kursun
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1965
The current in the blocking direction in a diode is called the leakage current. There are no leakage currents in the transistor with its two diodes if one electrode is open at a time. The amounts of these leakage currents depend only a little upon the value of the voltage applied (saturation).
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The current in the blocking direction in a diode is called the leakage current. There are no leakage currents in the transistor with its two diodes if one electrode is open at a time. The amounts of these leakage currents depend only a little upon the value of the voltage applied (saturation).
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Leakage current characteristics of XLPE
Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1981, 1981Because the leakage current in XLPE changes in proportion to the quantity of the crosslinking agent by-products, leakage current might be controlled by the amount of ion conduction carriers which are supplied with the by-products. And because the leakage current in impregnated PE sheets changes in proportion to the conductivity of each by-product in ...
T. Hayami, S. Yarnanouchi, K. Yatsuka
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On Composite Leakage Current Maximization
Journal of Electronic Testing, 2008Sub-threshold, gate and reverse biased junction band-to-band tunneling leakage currents depend on the logic inputs of a CMOS circuit. In this paper, we consider all leakage currents together and generate pattern with the objective of maximizing the overall leakage current to avoid any optimism in leakage current estimation.
Rastogi, A +3 more
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Single Event Leakage Current in Flash memory
2006 IEEE International Conference on IC Design and Technology, 2006Flash memories are the leader among nonvolatile memory technologies. Ionizing radiation impact their reliability both on the control circuitry and on the memory array itself. In particular, in FGs hit by ions the tracks of defects generated by ions in the tunnel oxide may result in a Radiation Induced Leakage Current (RILC), which can leads to ...
G. CELLERE +4 more
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Automated Leakage Current Measurement for Medical Equipment Safety
2005 IEEE Engineering in Medicine and Biology 27th Annual Conference, 2005Electrical safety is always an important item of medical equipment in hospital. With the development of clinical engineering, the electric safety testing has become a routine procedure for the unit of clinical engineering in hospital. Among the parameters of safety standard of medical equipment, the leakage currents are more important than others. This
Hu, Y +4 more
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Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films
Journal of the European Ceramic Society, 2010Abstract The effect of oxygen partial pressure (OPP) on the leakage current density of Bi 5 Nb 3 O 15 (B 5 N 3 ) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the ...
Kyung-Hoon Cho +7 more
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Dc leakage currents in trichloroethylene oxides
Microelectronics Reliability, 1982Abstract Undoped silicon dioxide is compared to oxide in which trichloroethylene (TCE) was used during growth. The gate leakage currents in MOS transistors are examined. It is shown that a reduction in the leakage current occurs in TCE oxides. A novel measurement technique is employed to examine the gate leakage currents of the MOSFETs.
Kiran M. Bhatt, Joseph H. Nevin
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pMOSFET Off-state Leakage and Junction Leakage Current in Ge-based Devices
ECS Transactions, 2009The impact of the post-implantation Rapid Thermal Anneal (RTA) temperature on the leakage current of p+n junctions fabricated in epitaxial Ge-on-Si substrates is analyzed in terms of the area and the peripheral leakage current component. While the former is not clearly affected, it is shown that the peripheral leakage current density increases in the ...
SIMOEN E +5 more
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