Results 151 to 160 of about 5,665,825 (297)

Deep-learning side-channel analysis of embedded ML-KEM: Single-trace message recovery, cross-device generalization, and frequency-band leakage characterization. [PDF]

PLoS One
Kuo CW, Hung YI, Lin KL.
europepmc   +1 more source

Ferrocene‐Based Self‐Assembled Monolayers Enable Ultra‐High Specific Detectivity in Perovskite Photodetectors

Advanced Materials, EarlyView.
We report perovskite photodetectors with record specific detectivities exceeding 1013 Jones with a novel molecular design strategy to functionalize self‐assembled monolayers (SAMs) with ferrocene (Fc) derivatives. Fc‐SAM‐based devices also exhibit strong operational stability and enable data transmission rates exceeding 1 Mbps in a LiFi system ...
Edoardo Angela, William D. J. Tremlett, Francesco Vanin, William J. O. Rodriguez Kazeem, Zhuoran Qiao, Davide Nodari, Francesco Furlan, Zonglong Zhu, Martyn A. McLachlan, Nicholas J. Long, Nicola Gasparini   +10 more
wiley   +1 more source

Distributed electricity-carbon co-optimization of hydrogen energy storage microgrids with dynamic laplace perturbation and model predictive control. [PDF]

PLoS One
Li Z, Liao M, Wang Y, Zhang R, Sun J, Zheng H.   +5 more
europepmc   +1 more source

Seamless Mechanical Programming Through Hybrid Epoxy–Acrylate Printing for Soft–Rigid Robots

Advanced Materials, EarlyView.
Hybrid epoxy‐acrylate printing enables seamless fabrication of soft–rigid robotic systems with covalently integrated interfaces and functionally graded mechanics. Grayscale exposure expands the accessible material space, enabling spatially programmed actuation through patterned stiffness while revealing the mechanics and durability of continuously ...
David C. Bershadsky, Franz A. Stolpen, Zachariah A. Page, Lillian Chin   +3 more
wiley   +1 more source

Reactivity‐Guided Janus Graphene With Asymmetric Interfacial Electrostatics for Tunable Charge Transport

Advanced Materials, EarlyView.
Stepwise dual‐side functionalization creates covalent Janus graphene with chemically and electrostatically asymmetric interfaces. The resulting nonadditive surface‐potential response and pronounced charge‐transport modulation demonstrate a versatile route for tailoring the electronic properties of graphene.
Shishi Liu, Zhuting Hao, Mira Kreßler, Oguzhan Yücel, Lotte Polling, Adrián Dewambrechies, Wesley Pietsch, Philip Nickl, Felix Fels, Kevin Pagel, Markus R. Heinrich, Patryk Kusch, Kirill Bolotin, Xin Chen, Siegfried Eigler   +14 more
wiley   +1 more source

EGaIn-based thermal management for high heat flux electronics. [PDF]

iScience
Joung JY, Na H, Yoon SH, Jeong YH, Lee M, Majidi C, Kim H.   +6 more
europepmc   +1 more source

High‐Mobility Chalcogenophene‐Engineered Diketopyrrolopyrrole Mixed Ionic‐Electronic Conductors With Doping Tolerance for Low‐Power Organic Electrochemical Transistors

Advanced Materials, EarlyView.
Chalcogen substitution emerges as a powerful strategy for designing high‐performance OMIECs. In aliphatic–glycol side chain diketopyrrolopyrrole polymers, biselenophene incorporation promotes a planar, polarizable, and doping‐tolerant quinoidal framework, enabling PDPP‐4EG‐Se2 to combine high hole mobility, large µC*, enhanced operational stability ...
Shinbee Oh, Tae Hoon Kim, Dahyun Jeong, Ji Hwan Kim, Seungjin Lee, Tan Ngoc‐Lan Phan, Alexander Tipan‐Quishpe, Myung‐Han Yoon, Keehoon Kang, Bumjoon J. Kim   +9 more
wiley   +1 more source

Fluorine surface engineering for V_t control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing. [PDF]

Nano Converg
Park K, Lim S, Han S, Choi J, Kim M, Ahn J, Choi C.   +6 more
europepmc   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

Advanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu, Junjie Zhao, Richard Schroedter, Jason Vincent, Hampus Hoffman, Leif Riemenschneider, Abdallh Herbawe, Hao Shen, Ronald Tetzlaff, Stefan Slesazeck, Gianaurelio Cuniberti, Thomas Mikolajick, Benjamin Max   +12 more
wiley   +1 more source

Leakage Power Reduction Using Bitwidth Optimization

Leakage power dissipation constitutes an increasing fraction of the total power in modern semiconductor technologies. Designing power efficient products will require consideration of leakage power in the earliest phases of design.
曹, ユン, 安浦, 寛人, Cao, Yun, Yasuura, Hiroto, ソウ, ユン   +4 more
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