Results 71 to 80 of about 5,665,825 (297)

Electrical Line Fault Detection and Line Cut-Off Equipment and Control

Journal of Control Science and Engineering, 2022
In order to locate the leakage fault location of low-voltage electrical lines, cut off the power supply of electrical lines, and ensure the safety and reliability of the power supply network, this paper proposes an electrical line leakage fault detection
Yakun Fu
doaj   +1 more source

Leakage Models for High-Level Power Estimation [PDF]

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2018
Leakage currents are one major concern when designing recent CMOS devices, making design for leakage at all stages of the design process mandatory. Early leakage optimization requires early leakage prediction, and for electronic system level design, this means estimation capabilities at register transfer (RT) level or above.
Domenik Helms, Reef Eilers, Malte Metzdorf, Wolfgang Nebel   +3 more
openaire   +2 more sources

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Negative Leakage [PDF]

We build a simple analytical general equilibrium model and linearize it, to find a closed-from expression for the effect of a small change in carbon tax on leakage – the increase in emissions elsewhere.
Kathy Baylis, Don Fullerton, Daniel Karney   +2 more
core   +2 more sources

SOTB Implementation of a Field Programmable Gate Array with Fine-Grained Vt Programmability

Journal of Low Power Electronics and Applications, 2014
Field programmable gate arrays (FPGAs) are one of the most widespread reconfigurable devices in which various functions can be implemented by storing circuit connection information and logic values into configuration memories.
Masakazu Hioki, Chao Ma, Takashi Kawanami, Yasuhiro Ogasahara, Tadashi Nakagawa, Toshihiro Sekigawa, Toshiyuki Tsutsumi, Hanpei Koike   +7 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Enhanced ONOFIC-Controlled Nano-Domino Logic Using FinFET and CNTFET Devices for Ultra-Low Leakage with AI-Assisted Optimization in 32 nm VLSI System

Engineering Perspective
This paper presents an enhanced ONOFIC (ON/OFF Isolation Control) nano-domino logic framework implemented using 32 nm FinFET and CNTFET technologies for ultra-low leakage VLSI systems. The proposed ONOFIC technique employs feedback-controlled transistors
Mr Ramavathu Ramesh Naik, Dr Ramakrishna Reddy Donapati, Dr Krishnanaik Vankdoth   +2 more
doaj   +1 more source