Results 251 to 260 of about 31,003,301 (345)

Mitigating Creep Anisotropy and Enhancing Performance in Additively Manufactured Ni‐Based Superalloys: A Review

open access: yesAdvanced Engineering Materials, EarlyView.
Additive manufacturing introduces pronounced microstructural and crystallographic anisotropy in Ni‐based superalloys, resulting in orientation‐dependent creep deformation and damage. This review identifies the key microstructural origins of creep anisotropy, examines their influence on dominant deformation mechanisms, and highlights processing ...
Chandan Kumar   +3 more
wiley   +1 more source

Diagnostic accuracy of machine learning approaches for suicide‑related outcomes: a meta‑analysis. [PDF]

open access: yesAnn Gen Psychiatry
Kohnepoushi P   +5 more
europepmc   +1 more source

Investigation of Resonance Characteristics of More Than 10 000 Metal‐Coated Silicon MEMS Cantilevers Using Machine Learning

open access: yesAdvanced Engineering Materials, EarlyView.
More than 10 000 metal‐coated silicon MEMS cantilevers are fabricated and characterized to build a large‐scale experimental dataset spanning multiple vibrational modes. Machine learning algorithms are benchmarked to predict resonance frequency and quality factor, with ensemble based models achieving accuracy approaching experimental uncertainty.
Sina Zare Pakzad   +8 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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