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Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

open access: yesAdvanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang   +12 more
wiley   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee   +5 more
wiley   +1 more source

Unlocking the Full Potential of MgAgSb by Unravelling the Interrelation of Phase Constitution and Thermoelectric Properties

open access: yesAdvanced Functional Materials, EarlyView.
Persistent secondary phases govern the performance of many thermoelectric materials, particularly of high performance MgAgSb. In this study advanced microstructural characterization for unequivocal phase identification combined with transport modeling and statistical analysis enabled the quantification of each phase's impact, revealing the most ...
Amandine Duparchy   +3 more
wiley   +1 more source

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